CGHV35150 Search Results
CGHV35150 Price and Stock
MACOM CGHV35150F-AMPCGHV35150F DEV BOARD WITH HEMT |
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CGHV35150F-AMP | Box | 1 | 1 |
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CGHV35150F-AMP | 1 |
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MACOM CGHV35150PRF MOSFET HEMT 50V 440206 |
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CGHV35150P | Tray | 50 |
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CGHV35150P |
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CGHV35150P | 1 |
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MACOM CGHV35150-TBTEST FIXTURE FOR CGHV35150F |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV35150-TB | Bulk | 1 |
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CGHV35150-TB | 2 | 2 |
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CGHV35150-TB | 2 | 1 |
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MACOM CGHV35150FGaN FETs GaN HEMT 2.9-3.5GHz, 150 Watt |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV35150F | 20 |
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CGHV35150F | 49 | 1 |
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CGHV35150F | 49 | 1 |
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CGHV35150 Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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CGHV35150F |
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RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 150W | Original | |||
CGHV35150F-AMP |
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CGHV35150F DEV BOARD WITH HEMT | Original | |||
CGHV35150F-AMP |
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CGHV35150F DEV BOARD WITH HEMT | Original | |||
CGHV35150F-TB |
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RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV35150F | Original | |||
CGHV35150P |
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150W, GAN HEMT, 50V, 2.9-3.5GHZ, | Original | |||
CGHV35150P |
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150W, GAN HEMT, 50V, 2.9-3.5GHZ, | Original | |||
CGHV35150-TB |
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RF/IF and RFID - RF Evaluation and Development Kits, Boards - TEST FIXTURE FOR CGHV35150F | Original |
CGHV35150 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a |
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CGHV35150 CGHV35150 CGHV35150F-TB | |
Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a |
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CGHV35150 CGHV35150 CGHV35150F-TB |