CGH35060F1 Search Results
CGH35060F1 Datasheets Context Search
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Contextual Info: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal |
Original |
CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1 | |
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Contextual Info: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal |
Original |
CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1 | |
16312 transistor
Abstract: CGH35060F1-TB
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Original |
CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1 16312 transistor CGH35060F1-TB |