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    Untitled

    Abstract: No abstract text available
    Text: CEP658N/CEB658N CEF658N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP658N 180V 0.22Ω 16A 10V CEB658N 180V 0.22Ω 16A CEF685N 180V 0.22Ω 16A 10V d 10V Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP658N/CEB658N CEF658N CEP658N CEB658N CEF685N O-263 O-220 O-220F O-220/263

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139