CBS10S30 Search Results
CBS10S30 Price and Stock
Toshiba America Electronic Components CBS10S30,L3FDIODE SCHOTTKY 20V 1A CST2B |
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CBS10S30,L3F | Cut Tape | 6,527 | 1 |
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CBS10S30,L3F | Reel | 12 Weeks | 10,000 |
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CBS10S30,L3F | 8,365 |
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CBS10S30,L3F | 3,762 | 126 |
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CBS10S30,L3F | 3,762 | 1 |
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CBS10S30,L3F | Reel | 10,000 |
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Toshiba America Electronic Components CBS10S30,L3F(TDiode Small Signal Schottky Si 30V 1A 2-Pin CST-B T/R |
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CBS10S30,L3F(T | 9,600 | 342 |
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CBS10S30,L3F(T | Cut Tape | 9,600 | 0 Weeks, 1 Days | 10 |
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Toshiba America Electronic Components CBS10S30,L3F(BCBS10S30,L3F(B |
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CBS10S30,L3F(B | 6,987 | 321 |
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CBS10S30,L3F(B | 5,589 |
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Toshiba America Electronic Components CBS10S30,L3F(ADiode Small Signal Schottky Si 30V 1A 2-Pin CST-B |
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CBS10S30,L3F(A | 5,165 | 187 |
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CBS10S30 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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CBS10S30,L3F |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20V 1A CST2B | Original |
CBS10S30 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CBS10S30 Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2B 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CBS10S30 | |
Contextual Info: CBS10S30 Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2B 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CBS10S30 |