CAS10 Search Results

CAS100H12

Contextual Info: CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS 1.2 kV RDS on (TJ = 25˚C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125˚C) Features • • • • • • 1.8 mJ Package

CPWR-AN12

Abstract: CAS100H12AM1
Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

CAS10D25

Abstract: CAS10D25-722 CAS10D25-282
Contextual Info: Antenna < Transponder: RF-ID RX > Type: CAS10D25 ◆ Product Description ＊ 10.2mm Max.x3.7mm Max(L×W), 2.6mm Max. Height. ＊ Operating Temperature: -40℃ ~ +125℃. ◆ Feature ＊ Low profile. ＊ Suitable for smart key system and TPMS. ＊ High Sensitivity and Reliability.

CAS100H12

Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
Contextual Info: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode

PCB Antenna 125KHz

Abstract: CAS10D25
Contextual Info: LF Receiver Antenna CAS10D25 RoHS Description •LF receiver antenna for X/Y axis. • Covered by over-molding. • Low profile. • L W H: 10.2 3.7x2.6 mm Max. • Product weight: 0.22g Ref. • RoHS compliance. x × × Environmental Data • Operating temperature range: -40 ~+125

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

nc29

Abstract: VCC62 GND42 OUT15 c14 c13 IC TTL 7400 VCC15 NC11 NC20 CAS15
Contextual Info: <Value> HSP50215 FIFORDY A0 A1 GND34 A2 A3 A4 VCC38 A5 A6 A7 GND42 A8 A9 WR VCC46 CE RD RST SYNCIN OFM NC2 NC3 CASZ CAS0 CAS1 GND7 CAS2 CAS3 CAS4 NC11 CAS5 CAS6 CAS7 VCC15 GND16 REFCLK CAS8 CAS9 NC20 CAS10 CAS11 VCC23 CAS12 CAS13 CAS14 CAS15 NC28 NC29 NC30

Contextual Info: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7

35Z diode

Abstract: CX530 RADOS transistor cs522 74ABT4764BB CS511 CS522 CA-512 74abt4764 T72 diode
Contextual Info: BICMOS LOGIC PRODUCTS 7 4 A B T 4 7 6 4 Programmable DRAM Controller Product Specification March 2 2 ,1 9 9 4 IC23 Philips Semiconductors PHILIPS PHILIPS This Mate] m tei 1 1 0 Ö 2 L D G Ô3 2 Philips Semiconductors BiCMOS Logic Products Product specification

Intel Microprocessor 240440

Abstract: 82360SL intel 82360SL
Contextual Info: in te i November 1992 Intel486 SL Microprocessor SuperSet Data Book Order Number: 241325-001 2-1 Intel486™ SL Microprocessor SuperSet CONTENTS CONTENTS page page 1.0 INTRODUCTION . 2-6 3.0 82360SL I/O SPECIFICATIONS . . . . 2-79

IA-EM02A

Abstract: Emerging Display Technologies 6 ccfl inverter LCD display CCFL inverter Emerging Display EG SY 180/12 200H EU-002 ccfl inverter 6 pin 32E00
Contextual Info: FILE NO . CAS-10073 EXAMINED BY : EMERGING DISPLAY APPROVED BY: ISSUE : AUG. 10, 1998 TOTAL PA G E : TECHNOLOGIES CORPORATION VERSION : 4 CUSTOMER ACCEPTANCE SPECIFICATIONS f \ M ODEL NO . : 32E00ÎCCFL TYPES FO R M ESSRS : 10 CUSTOMER'S APPROVAL DATE : BY

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

yg 2822

Abstract: RAS 0510 cs8221 neat Waukesha 6670 82C631 82c211 2021G 82C206 CHIPset for 80286 REG62
Contextual Info: PRELIM INARY C S 8221 NEW ENHANCED AT NEAT DATA BOOK 8 2 C 2 1 1 / 8 2 C 2 1 2 / 8 2 C 2 1 5 / 8 2 C 2 0 6 (IPC ) CHIPSet™ 100% IBM™ PC/AT Compatible New En­ hanced CHIPSet™ for 12MHz to 16MHz systems Supports 16MHz 80286 operation with only 0.5-0.7 wait states for 100ns DRAMs and 12

TY320

Abstract: IA-EM02A
Contextual Info: EXAMINED BY : FILE NO . Kevin Kuo ISSUE : EMERGING DISPLAY APPROVED BY: CAS-10227 MAY.06,2002 TOTAL PAGE : 13 TECHNOLOGIES CORPORATION VERSION : CUSTOMER ACCEPTANCE MODEL SPECIFICATIONS NO . : 32F62 CCFL TYPES FOR MESSRS : CUSTOMER'S APPROVAL : _

Y320

Contextual Info: EXAMINED BY : FILE NO . EMERGING DISPLAY APPROVED BY: TECHNOLOGIES CORPORATION ISSUE : DEC.01,2003 TOTAL PAGE : VERSION : CUSTOMER ACCEPTANCE MODEL CAS-10295 13 3 SPECIFICATIONS NO . : 32F62 LED TYPES FOR MESSRS : CUSTOMER'S APPROVAL : _

cga ega vga converter

Contextual Info: WD90C20/WD90C20A INTRODUCTION 1.0 INTRODUCTION This data sheet applies to both the WD90C20, and WD90C20A. The WD90C20A is a 0.9 micron version of the WD90C20 VGA controller chip. For convenience all references to these two devices will be referred to as the WD90C20.

Contextual Info: LF2249 12 x 12-bit Digital Mixer DEVICES INCORPORATED FEATURES _ □ 40 MHz Data and Computation Rate □ Two 12 x 12-bit Multipliers with Individual Data Inputs □ Separate 16-bit Input Port for Cascading Devices □ Independent, User-Selectable 1-16 Clock Pipeline Delay for Each Data

39S256160T

Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
Contextual Info: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: -60 Wc RAS Access Time 60ns toAC CAS Access Time 20ns tAA Access Time From Address

SEM t11

Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command

CA10

Abstract: V54C3256804VA
Contextual Info: MOSEL VITELIC V54C3256804VA HIGH PERFORMANCE 3.3 VOLT 32M X 8 SYNCHRONOUS DRAM 4 BANKS X 8Mbit X 8 PRELIMINARY -7PC -7 -8PC -8 System Frequency fCK 143MHz 143MHz 125MHz 125MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: S M A E E S S H S P 5 2 1 5 Digital UpConverter August 1997 Features Description • Output Sample Rates Up to 52 MSPS; Input Data Rates Up to 13 MSPS The HSP50215 Digital UpConverter DUC is a QASK/FM modulator/FDM upconverter designed for high dynamic range applications such as cellular basestations. The DUC