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    ROHM Semiconductor UM6K33NTN

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    TE Connectivity 9-329631-3

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    Vishay Intertechnologies BYT54J-TAP

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    Dialight 5561704224F

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    TE Connectivity 9-329049-1

    RF Connectors / Coaxial Connectors COAXICON FERRULE LF PLTG
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    C9329 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C9329 Hamamatsu Photosensor amplifier Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise Original PDF

    C9329 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the


    Original
    PDF S2281 C9329 S2281-01 S9219 E2573 SE-171 KSPD1044E02

    Untitled

    Abstract: No abstract text available
    Text: MODULE フォトセンサアンプ C9329 デジタル出力機能付微弱光用低雑音電流−電圧変換アンプ C9329は、フォトダイオードの微弱な光電流を極めて低雑音で検出できる電流−電圧変換アンプです。光電流検出感度は、


    Original
    PDF C9329 C9329ã RS-232Cé S2281 S2281-01 S2281/-04 S2281-04 UG-625B/U KSPDB0090JA

    D-Sub 9-pin female Connector

    Abstract: 6LR61 S9219 BPS-8 equivalent AC Photonics 006P C9329 S2281
    Text: MODULE Photosensor amplifier C9329 Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise C9329 is a current-to-voltage conversion amplifier used to amplify very slight photocurrent from a photodiode with very low noise. Three ranges


    Original
    PDF C9329 C9329 RS-232C 16-bit) SE-171 KACC1100E03 D-Sub 9-pin female Connector 6LR61 S9219 BPS-8 equivalent AC Photonics 006P S2281

    S9219

    Abstract: BPS-8 equivalent 6LR61 Battery 006P 006P C9329 S2281 D-Sub 9-pin female Connector
    Text: MODULE Photosensor amplifier C9329 Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise C9329 is a current-to-voltage conversion amplifier used to amplify very slight photocurrent from a photodiode with very low noise. Three ranges


    Original
    PDF C9329 C9329 RS-232C 16-bit) SE-171 KACC1100E02 S9219 BPS-8 equivalent 6LR61 Battery 006P 006P S2281 D-Sub 9-pin female Connector

    S2281-01

    Abstract: si photodiode S2281-04 S9219 C9329 S2281
    Text: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the


    Original
    PDF S2281 C9329 S2281-01 S9219 E2573 SE-171 KSPD1044E03 si photodiode S2281-04

    ug625b

    Abstract: C9329 S2281 S2281-01 S2281-04 S9219
    Text: PHOTODIODE Siフォトダイオード S2281シリーズ BNCコネクタ付Siフォトダイオード S2281シリーズはBNCコネクタ付パッケージのフォトダイオードです。フォトセンサアンプ C9329と簡単に接続して使うことができます


    Original
    PDF S2281 C9329 S2281-01 C9329M S9219 E2573 S2281-04 ug625b C9329 S2281 S2281-04 S9219

    Untitled

    Abstract: No abstract text available
    Text: MODULE Photosensor amplifier C9329 Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise C9329 is a current-to-voltage conversion amplifier used to amplify very slight photocurrent from a photodiode with very low noise. Three ranges


    Original
    PDF C9329 C9329 RS-232C 16-bit) KACC1100E04

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the


    Original
    PDF S2281 C9329 S2281-01 S9219 E2573 SE-171 KSPD1044E01

    S2281

    Abstract: 006P 6LR61 C9329 E2573 CT2R
    Text: MODULE フォトセンサアンプ C9329 デジタル出力機能付微弱光用低雑音電流−電圧変換アンプ C9329は、フォトダイオードの微弱な光電流を極めて低雑音で検出できる電流−電圧変換アンプです。光電流検出感度は、


    Original
    PDF C9329 C9329- L3RS-232C RS-232C) RS-232C, UG-625B/U KSPDB0090JA KSPDA0080JA 435-85581126-1TEL S2281 006P 6LR61 C9329 E2573 CT2R

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


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    PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    Untitled

    Abstract: No abstract text available
    Text: Siフォトダイオード 第 章 2 1 Siフォトダイオード 章 1-1 動作原理 1-2 等価回路 1-3 電流ー電圧特性 1-4 直線性 1-5 分光感度特性 1-6 ノイズ特性 1-7 感度均一性 1-8 応答速度 1-9 オペアンプとの接続


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    PDF KPSDC0089JA

    C9031ZH

    Abstract: C9058
    Text: High-Endurance Cabling > THE EXCEPTIONAL CHOICE FOR PEACE OF MIND Carol Brand EXZEL Complete Peace of Mind As a full electronics solutions provider with a commitment to designing innovative cable constructions, General Cable recognizes the growing demand for a higher performance line of


    Original
    PDF CAR-0139-0312 C9031ZH C9058

    S8558

    Abstract: No abstract text available
    Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: High-Endurance Cabling > THE EXCEPTIONAL CHOICE FOR PEACE OF MIND Carol Brand EXZEL Complete Peace of Mind As a full electronics solutions provider with a commitment to designing innovative cable constructions, General Cable recognizes the growing demand for a higher performance line of


    Original
    PDF CAR-0139-0312

    Si photodiode

    Abstract: No abstract text available
    Text: Si photodiodes CHAPTER 02 1 Si photodiodes 1-1 Operating principle 1-2 Equivalent circuit 1-3 Current vs. voltage characteristics 1-4 Linearity 1-5 Spectral response 1-6 Noise characteristics 1-7 Sensitivity uniformity 1-8 Response speed 1-9 Connection to an op amp


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    PDF KPSDC0088EA KPSDC0089EA Si photodiode

    Selection guide

    Abstract: United Detector Technology PSD
    Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable


    Original
    PDF KACC0001E02 Selection guide United Detector Technology PSD

    Sensors PSD

    Abstract: No abstract text available
    Text: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches


    Original
    PDF 16-element C9004) KACCC0426EB Sensors PSD

    Untitled

    Abstract: No abstract text available
    Text: モジュール 1 ミニ分光器 1-1 1-2 1-3 1-4 1-5 1-6 1-7 当社の技術 構造 特性 動作モード 評価用ソフトウェア 新たな取り組み 応用例 2 MPPCモジュール 2-1 2-2 2-3 2-4 2-5 特長 使い方 特性 新たな取り組み


    Original
    PDF KACCC0426JB

    Untitled

    Abstract: No abstract text available
    Text: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用


    Original
    PDF

    Hamamatsu PbS

    Abstract: United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original
    PDF K1713/K3413-01, SE-171 KIRD1029E06 Hamamatsu PbS United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02

    A3179-03

    Abstract: pbse C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
    Text: UV TO IR DETECTOR 複合素子 K1713/K3413-01, -02 紫外域から赤外域まで検出が可能 透過型Siフォトダイオードと赤外線検出素子がサンドイッチ構造になっているため 同一光路での設計が可能です。 特長


    Original
    PDF K1713/K3413-01, K1713-01 K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C9329 C3757-02 A3179-03 pbse C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02

    Untitled

    Abstract: No abstract text available
    Text: Two-color detectors K1713/K3413-01, -002 Wide spectral response range from UV through IR The K1713/K3413-01, -002 have a bi-level structure in which an infrared transmitting Si photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


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    PDF K1713/K3413-01, KIRD1029E07

    C6073

    Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
    Text: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original
    PDF RP1150 RP1151 RP2450 RP3510 RP3511 RP3512 RP3513 RP3514 RP3990 RP4800 C6073 SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode

    Untitled

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original
    PDF K1713/K3413-01, SE-171 KIRD1029E06