C10T04QH Search Results

Contextual Info: SBD T y p e : C10T04 C10T04QHQH-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.45g Symbol C10T04QH-11A Unit Repetitive Peak Reverse Voltage

Contextual Info: SBD T y p e : C10T04QH •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.4g ■最大定格 / Maximum Ratings

c10t04

Abstract: C10T04QH
Contextual Info: SBD T y p e : C10T04 C10T04QH OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB SMD Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.4g Symbol

Contextual Info: SBD T y p e : C10T04QH •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.4g ■最大定格 / Maximum Ratings

Contextual Info: 10A Avg. 40 Volts SBD C10T04QH •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage

Contextual Info: SBD T y p e : C10T04QH-11A •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.45g ■最大定格 / Maximum Ratings

Contextual Info: SBD T y p e : C10T04 C10T04QHQH-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.45g Symbol C10T04QH-11A Unit Repetitive Peak Reverse Voltage

Contextual Info: SCHOTTKY BARRIER DIODE C10T04QH C10T04QH-11A i0 A /4 0 v FE A T U R E S o |SQUARE-PAKl TO-263AB SMD Packaged in 24mm T ape and Reel : C 1 0 T -Q H o T a b le ss TO-220 : C 10T-Q H -11A ODual Diodes—Cathode Common OLow Forw ard V oltage Drop o High Surge Capability

C10T04QH-11A

Contextual Info: SBD T y p e : C10T04 C10T04QHQH-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.45g Symbol C10T04QH-11A Unit Repetitive Peak Reverse Voltage

C10T04QH

Contextual Info: SBD T y p e : C10T04 C10T04QH OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB SMD Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.4g Symbol

Contextual Info: 10A Avg. 40 Volts SBD C10T04QH-11A •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage

Contextual Info: SBD T y p e : C10T04 C10T04QH OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB SMD Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.4g Symbol

106m1

Abstract: SMD DIODE 512 106-M1 251C C10T04QH C10T04QH-11A
Contextual Info: SCHOTTKY BARRIER DIODE C10T04QH C10T04QH-11A 10A/40V FEATURES o ISQUARE-PAKI TO-263AB SMD Packaged in 24mm Tape and Reel : C10T-QH oTabless TO-220 : C10T-QH-11A oDual Diodes—Cathode Common OLow Forward Voltage Drop o High Surge Capability OTj=150°C operation

Contextual Info: SBD T y p e : C10T04QH-11A •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.45g ■最大定格 / Maximum Ratings

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

Contextual Info: SCHOTTKY BARRIER DIODE L 4 .0 S S MrafoBSTL . FEATURES o |SQUARE-PAK1 TO-263AB (SMD) Packaged in 24mm Tape and Reel : C10T-QH oTabless TO-220 : C10T-QH-11A oDual Diodes—Cathode Common OLow Forward Voltage Drop o High Surge Capability OTj=150°C operation

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04