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    BUZ34 Search Results

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    BUZ34 Price and Stock

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    Bristol Electronics BUZ34 90
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    Siemens BUZ346

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    Bristol Electronics BUZ346 6 1
    • 1 $8.96
    • 10 $5.824
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    Quest Components BUZ346 16
    • 1 $3.132
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    BUZ346 4
    • 1 $12
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    Others BUZ348

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    Bristol Electronics BUZ348 5
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    Infineon Technologies AG BUZ349

    32 A, 100 V, 0.06 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-218
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    Quest Components BUZ349 420
    • 1 $2.5
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    ComSIT USA BUZ349 913
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    SIEMENS N/A BUZ344

    POWER FIELD-EFFECT TRANSISTOR, 46A I(D), 100V, 0.035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-218
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ344 40
    • 1 $3.132
    • 10 $3.132
    • 100 $2.088
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    Find more BUZ34 price and stock on Findchips.com

    BUZ34 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ34 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ34 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ34 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ34 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ34 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUZ34 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ34 Siemens Power Transistors Scan PDF
    BUZ34 Siemens main ratings Scan PDF
    BUZ34 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    BUZ341 Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ341 Siemens Original PDF
    BUZ341 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ341 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ341 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ341 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ342 Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ342 Siemens Original PDF
    BUZ342 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) Original PDF
    BUZ342 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ344 Infineon Technologies Power MOSFET, 100V, TO-218, RDSon=0.035 ?, 50A, NL Original PDF

    BUZ34 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF150CF

    Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152


    Original     		BUZ349 SFN152 YTFP152 YTF152 IRFP152 RFH35Nl0 RFK35Nl0 PB125N60HM PB125N60HP IRF150CF GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTFP150 2SK747 PDF

    buz349

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349 PDF

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


    Original     		BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410 PDF

    BUZ348

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE PowerMOS transistor D • tab S 3 e]31 0014730 BUZ348 . T - 3 < M " 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		001M73Ã BUZ348 T0218AA; T-39-13 BUZ348 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • b b S a ^ l 0014736 S ■ BUZ348 r - 3 ^ - i 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ348 TQ218AA; T-39-13 LLS3T31 OD14743 PDF

    h a 431 transistor

    Abstract: BUZ349 transistor buv y 431 transistor
    Text: ObE D N AMER P H I L I P S / D I S C R E T E PowerMOS transistor 1^ 53^31 0014745 t BUZ3491 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		b53i3i BUZ349 T0218AA; T-39-13 h a 431 transistor BUZ349 transistor buv y 431 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE _ BUZ34_ ObE D • ^ 5 3 ^ 3 1 QOlHblE 2 ■ r-s^-n July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ34_ BIIZ34_ bb53131 T-39-11 QD14tjlfi T-39-11- PDF

    buz350 mosfet

    Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34


    Original     		2100p 1800p IAFJ240 BUZ37 BUZ31 BUZ34 IXTL15N20 MTH15N20 MTM15N20 buz350 mosfet DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53^31 0014731 T BUZ347 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUZ347 T0218A bb53T31 001473S T-39-13 001473b LL53T31 PDF

    BUZ34

    Abstract: 6j11 V103
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ34_ ObE D • bb53T31 ODlMblS E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ34 bb53T31 bb53131 T-39-1 BUZ34 6j11 V103 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    BSS97

    Abstract: 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS98 BSS101
    Text: SÉ*G siPMos«npicjnz., mííMüs-FET07r>ígíA a^\ iz)i,ammitâumæ£xyi&ÿi<D 4 IS H « ® *S S It« « A r5 *lC « fc O , r|])ALM aS-s±yV°9-M OS-FET^Z:'íífflU/c/-c j-^-ro jt* i= • e t ^ v ís ía •Z'fy+yymm m • M u ffig •-tzJb^ftCD/JvM-íb


    OCR Scan     		BSS110 BSS98 BUZ71L T0220 BUZ71 BUZ10 BUZ11A BSS97 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS101 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent PDF

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


    OCR Scan     		23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor N channel Enhancem ent mode Avalanche-rated Type BUZ 344 fl • • • ¡D 100 V n 50 A ^ DS (on 0.035 SI Maxim um Ratings Param eter Continuous drain current, Tc = 25 "C Pulsed drain current, Tc = 25 ’C Avalanche current, lim ited by 7] max


    OCR Scan     		C67078-S3132-A2 PDF

    N 341 AB

    Abstract: N 344 AB BUZ22 BUZ,350 8a5c buz341 C67078-S1406-A2
    Text: SIEMENS SIPMOS*Leistungstransistoren SIPMOS* Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Bestellnummer Ordering code Gehäuse Package Bild Figure 125 C67078-S1020-A2 TO-204 AA 4 40 C67078-S1316-A2 10-220 AB 8a 40 C67078-S1316-A3


    OCR Scan     		C67078-S1020-A2 C67078-S1316-A2 C67078-S1316-A3 C67078-S1348-A2 C67078-S1350-A2 C67078-S1351-A2 C67078-S1352-A2 C67078-S1353-A2 C67078-S3125-A2 C67078-S3120-A2 N 341 AB N 344 AB BUZ22 BUZ,350 8a5c buz341 C67078-S1406-A2 PDF

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF