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    Curtis Industries GBSX-20

    CONN BARRIER STRP 20CIRC 0.438"
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    DigiKey GBSX-20 Bulk 163 1
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    Master Electronics GBSX-20 4
    • 1 $31.21
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    Triplett Corporation BSX200

    TELEPHONE TEST SET TELECOM
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    DigiKey BSX200 4 1
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    Onlinecomponents.com BSX200
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    Vishay Sfernice P11A1Q0EBSX20102KF

    POT 1K OHM 1/4W PLASTIC R-LOG
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    DigiKey P11A1Q0EBSX20102KF Box 35
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    Vishay Sfernice P11A2B0BBSX20D0053

    POT PLASTIC
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    DigiKey P11A2B0BBSX20D0053 Box 30
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    Vishay Sfernice P11S2Q0EBSX20471KL

    POT 470 OHM 1/2W CERMET LOG
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    DigiKey P11S2Q0EBSX20471KL Box 30
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    BSX20 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSX20 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.5 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    BSX20 Philips Semiconductors NPN switching transistor - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.5 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    BSX20 Philips Semiconductors Small-signal Transistors Original PDF
    BSX20 Philips Semiconductors Silicon Planar Epitaxial Transistors Original PDF
    BSX20 Semelab NPN SILICON EPITAXIAL TRANSISTOR Original PDF
    BSX20 STMicroelectronics HIGH SPEED SATURATED SWITCHES - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.5 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    BSX20 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    BSX20 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    BSX20 Micro Electronics NPN SILICON PLANAR EPITAXIAL TRANSISTOR - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.5 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Scan PDF
    BSX20 Micro Electronics Semiconductor Devices Scan PDF
    BSX20 Motorola European Master Selection Guide 1986 Scan PDF
    BSX20 Mullard Quick Reference Guide 1977/78 Scan PDF
    BSX20 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BSX20 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSX20 Unknown Transistor Replacements Scan PDF
    BSX20 Unknown Transistor Replacements Scan PDF
    BSX20 Unknown Transistor Replacements Scan PDF
    BSX20 Unknown Transistor Replacements Scan PDF
    BSX20 Unknown Transistor Replacements Scan PDF
    BSX20 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF

    BSX20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BP317

    Abstract: BSX20 TRANSISTOR bsx20
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor BSX20


    Original     		M3D125 BSX20 MAM264 SCA54 117047/00/02/pp8 BP317 BSX20 TRANSISTOR bsx20 PDF

    BSX20

    Abstract: No abstract text available
    Text: BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		BSX20 BSX20 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSX20 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)400nØ @V(CBO) (V) (Test Condition)


    Original     		BSX20 Freq500M PDF

    BSX20DCSM

    Abstract: No abstract text available
    Text: BSX20DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


    Original     		BSX20DCSM MO-041BB) 1/10m 2-Aug-02 BSX20DCSM PDF

    BSX20

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BSX20 TO-18 APPLICATIONS High Speed Saturated Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage


    Original     		BSX20 C-120 BSX20 PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BSX20 NPN switching transistor PINNING FEATURES • Low current (max. 200 mA) PIN DESCRIPTION • Low voltage (max. 15 V). 1 emitter APPLICATIONS


    Original     		BSX20 PDF

    BSX20CSM

    Abstract: No abstract text available
    Text: BSX20CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		BSX20CSM 1/10m 2-Aug-02 BSX20CSM PDF

    Untitled

    Abstract: No abstract text available
    Text: BSX20CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		BSX20CSM 1/10m 17-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSX20 MECHANICAL DATA Dimensions in mm inches NPN SILICON EPITAXIAL TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) ) ) 1 7 2 1 . . ( ( 3 2 3 . 5 4 1 2 .7 (0 .5 0 0 ) m in . 3 .


    Original     		BSX20 BSX20 O-206AA) 100mA -20mA PDF

    BSX20

    Abstract: TO206AA 206AA
    Text: BSX20 MECHANICAL DATA Dimensions in mm inches NPN SILICON EPITAXIAL TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) ) ) 1 7 2 1 . . ( ( 3 2 3 . 5 4 1 2 .7 (0 .5 0 0 ) m in . 3 .


    Original     		BSX20 BSX20 O-206AA) 100mA -20mA TO206AA 206AA PDF

    BSX20

    Abstract: bsx20 01 bsx-20
    Text: BSX20 Low Power Bipolar Transistors Feature: • NPN Silicon Planar Switching Transistors. Applications: • High speed saturated switching applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E -


    Original     		BSX20 BSX20 bsx20 01 bsx-20 PDF

    BSX20

    Abstract: BSX19 saturated switches
    Text: BSX19 BSX20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The BSX 19 and BSX 20 are silicon planar epitaxial NPN transistors in Jed ecT O -18 metal case. They are p rim arily intended fo r very high speed saturated switching applications. ABSOLUTE M A XIM U M RATINGS


    OCR Scan     		BSX19 BSX20 JedecTO-18 G-1949 6-19S0 G-1946 BSX20 saturated switches PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSa^l 00276^ BAPX I BSX20 _ V _ SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and


    OCR Scan     		BSX20 -10mA PDF

    bsx20

    Abstract: No abstract text available
    Text: B S X 19 B S X 20 NPN SILICON PLANAR EPITAXIAL TRANSISTORS bMlÄ m: CASE T0-18 JrL THE BSX19 AND BSX20 ARE NPN 'SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR VERÏ HIGH SPEED SATURATED SWITCHING APPLICATIONS. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


    OCR Scan     		T0-18 BSX19 BSX20 500mA 360mW 100mA PDF

    P346A

    Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19
    Text: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20


    OCR Scan     		BSX19 19552B BSX20 19553X BSY95A 19572G 19573C ME9001 19331F ME9002 P346A ME8003 SGS C407 BSX20 2n2222a BFR37 sgs-ates transistors C760 P348A PDF

    BSX19

    Abstract: BSX20 TJ-55-c
    Text: BSX 19 BSX 20 NFN SILICON PIANAR EPITAXIAL TRANSISTORS fK îiM l CASE TO-18 Jr% THE BSX19 AND BSX20 ARE NFN 'SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR VERÏ HIGH SPEED SATURATED SWITCHING APPLICATIONS. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


    OCR Scan     		bsx19 bsx20 500mA 360mW 100mA TJ-55-c PDF

    BU102

    Abstract: BDX71 40636 2N3055V BSV95 BDX73 BSX27 BU100A BD663B transistor bu102
    Text: SG S-ATES Semiconductors T ran sistors-N P N N P N Switching Transistors C ode o < < o w REFERENCE T A B LE lc Range m A Is 13 13 13 BSV90 B SV 9 1 BSV92 BSV95 BSX20 13.5 15 15 50 15 1-100 10-100 1-100 10-800 1-500 B SX 2 6 B SX 2 7 BSX28 BSX30 BSX32 15


    OCR Scan     		BSV90 30801C BSV91 0802A BSV92 30803X BSV95 4774A BSX20 19077B BU102 BDX71 40636 2N3055V BDX73 BSX27 BU100A BD663B transistor bu102 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistor BSX20 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 15V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • High-speed saturated switching (and HF amplifier


    OCR Scan     		BSX20 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSX20 M A X IM U M R A T IN G S R a tin g S ym bol V alue U n it C olle cto r-E m itte r Voltage VCEO 15 Vdc C o lle cto r-E m itte r Voltage RBE = 10 Ohms VCER 20 Vdc C ollector-Base Voltage VCBO 40 Vdc E m itter-Base Voltage CASE 22-03, STYLE 1 TO-18 (TO-206AA)


    OCR Scan     		BSX20 O-206AA) PDF

    BSX20

    Abstract: No abstract text available
    Text: BSX20 NPN TO-18 SILICON PLANAR EPITAXIAL TRANSISTORS APPLICATIONS High Speed Saturated Switching Applications ABSOLUTE MAXIMUM RATINGS d e s c r ip t io n Collector -Base Voltage Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage


    OCR Scan     		BSX20 100mA, BSX20 -20mA 30Qus, 08042000NK/SG PDF

    Untitled

    Abstract: No abstract text available
    Text: B S X 19 B S X 20 S G S -T H O M S O N R!tlD EæilLI(g'iri iD(SS HIGH-SPEED SATURATED SW ITCHES D E S C R IP T IO N The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated


    OCR Scan     		BSX19 BSX20 PDF

    bsx20

    Abstract: No abstract text available
    Text: bb53T31 0Q134AS b • BSX19 BSX20 A ~ V - i 5 '- / 5" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and h.f. amplifier applications. QUICK REFERENCE DATA BSX19 BSX20 v CBO


    OCR Scan     		bb53T31 0Q134AS BSX19 BSX20 lcb53T31 00124Tb bsx20 PDF

    BSX20

    Abstract: BSX19 amer philips epitaxial silicon planar epitaxial transistors TS1013
    Text: L _ I _ • bb53T31 0015MÔÔ b m - =-N AMER P H I L I P S / D I S C R E T E OLE D Il Il BSX19 BSX20 SILICON PLANAR EPITAXIAL TRANSISTORS


    OCR Scan     		D015MÃ BSX19 BSX20 BSX19 10VBSX19 bbS3131 BSX20 amer philips epitaxial silicon planar epitaxial transistors TS1013 PDF

    BSX20

    Abstract: BSX19 100MA 45 V NPN
    Text: / , 'ï B S X 19 B S X 20 NPN SILICON PIANAR EPITAXIAL TRANSISTORS ISSitM i CASE TO-18 M THE BSX19 AND BSX20 ARE NPN 'SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR VERT HIGH SPEED SATURATED SWITCHING APPLICATIONS. CBE ABSOLUTE MAXIMUM RATINGS C o lle c to r - B a s e V o lta g e


    OCR Scan     		bsx19 bsx20 500mA 360mW 100mA 10hiA 100MA 45 V NPN PDF