BSS64 Search Results

BSS64LT1

Contextual Info: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C

BSS64LT1

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon 3 COLLECTOR BSS64LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 80 Vdc Collector–Base Voltage V CBO 120 Vdc Emitter–Base Voltage V EBO 5.0

d 1556 transistor

Contextual Info: • bbS3T31 0025fc.Qfl ISM « A P X N AMER PHILIPS/DISCRETE BSS64 b?E 3> HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended fo r high-voltage general purpose and switching

Contextual Info: Driver Transistors NPN Silicon 3 COLLECTOR BSS64LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 80 Vdc Collector–Base Voltage V CBO 120 Vdc Emitter–Base Voltage V EBO 5.0 Vdc 100 mAdc Collector Current — Continuous

BSS64LT1

Contextual Info: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Total Device Dissipation FR–5 Board 1

marking ek

Contextual Info: BCX 41 BSS64 NPN Silicon AF and Switching Transistors • • • High breakdown voltage Low collector-em itter saturation voltage Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering code for versions In bulk Ordering code (or versions on 8 mm-tape

Contextual Info: Discontinued Closest Alternative Part is MMBT5401 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – SEPTEMBER 95 ✪ COMPLIMENTARY TYPE — BSS64 PARTMARKING DETAIL — BSS63 - T3 BSS63R - T6 BSS63 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

transistor number code book FREE

Abstract: BSS64 24825
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSS64 NPN high-voltage transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING • Low current max. 100 mA

Contextual Info: BSS64L Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BSS63

Abstract: BSS64
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS64 NPN high voltage transistor Product data sheet Supersedes data of 2004 Jan 16 2004 Mar 12 NXP Semiconductors Product data sheet NPN high voltage transistor BSS64 FEATURES PINNING • Low current max. 100 mA

Contextual Info: 35E D • Ö 2 3 b 3 2 0 □ ü lb ? Q Ü 7 NPN Silicon AF and Switching Transistors IS IP BCX41 BSS64 T ' X i -0 * 1 SIEMENS/ SPCLi SEMICÔNDS • High breakdown voltage • Low collactor-emltter saturation voltage • Complementary types: BOX 42, BSS 63 PNP

400uAdc

Contextual Info: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS63 * COMPLEMENTARY TYPE - BSS64 PARTMARKING DETAILS - BSS63 = T3 BSS63R = T6 ABSOLUTE MAXIMUM RATINGS PARAMETER C ollector-B ase V oltage C o lle c to r-E m itte r V oltag e Em itter-Base V oltag e VALUE

marking u6

Abstract: BSS64 mark U6
Contextual Info: SEMICONDUCTOR BSS64 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 U6 1 2 Item Marking Description Device Mark U6 BSS64 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage

Contextual Info: SEMICONDUCTOR BSS64 T E C H N I C A L DATA EPI TAXI AL PLANAR NPN T RA NS I ST OR G E N E R A L PU R PO SE A PPLICATION. S W ITC H IN G APPLICATIO N. L B I DIM M A X IM U M RATING Ta=25°C 1 C H A R A C T E R IS T IC SY M B O L RA TIN G U N IT VfBO 120 V

BSS63R

Abstract: BSS63 BSS64 S0T23
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS63 * COMPLEMENTARY TYPE - BSS64 PARTMARKING DETAILS - BSS63 = T3 BSS63R = T6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current

BSS63

Abstract: BSS63R BSS64
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – SEPTEMBER 95 ✪ COMPLIMENTARY TYPE — BSS64 PARTMARKING DETAIL — BSS63 - T3 BSS63R - T6 BSS63 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -110 V Collector-Emitter Voltage

BCX41

Abstract: bcx41 "sot23"
Contextual Info: BCX41, BSS64 NPN Silicon AF and Switching Transistors 3
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX42, BSS63 PNP 2 1 Type Marking Pin Configuration BCX41 EKs 1=B 2=E 3=C SOT23

Contextual Info: BSS64R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition)

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES BSS64 PINNING • Low current max. 100 mA PIN • High voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-voltage general purpose and switching

marking of m7 diodes

Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.

transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Contextual Info: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.

KD transistor

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ C O M PLIM E N TA R Y TYPE - BSS63 PAR TM ARKING DETAIL - BSS64 - BSS64 U3 BSS64R - U6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L C o lle c to r-B a s e V o lta g e