BSP100-T Search Results
BSP100-T Price and Stock
Philips Semiconductors BSP100/T3POWER FIELD-EFFECT TRANSISTOR, 3.5A I(D), 30V, 0.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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BSP100/T3 | 5,602 |
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NXP Semiconductors BSP100-TAPE-7N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.5 A; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY; |
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BSP100-TAPE-7 | 207 |
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NXP Semiconductors BSP100T/RN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G4; JESD-609 Code: e3; |
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BSP100T/R | 98 |
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NXP Semiconductors BSP100/T3N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Qualification: Not Qualified; No. of Terminals: 4; |
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BSP100/T3 | 38 |
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NXP Semiconductors BSP100-TN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
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BSP100-T | 36 |
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BSP100-T Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BSP100T |
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Transistor Mosfet N-CH 30V 6A 4SOT-223 T/R | Original | |||
BSP100/T3 |
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Transistor Mosfet N-CH 30V 6A 4SOT-223 T/R | Original | |||
BSP100T3 |
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N-channel enhancement mode TrenchMOS transistor | Original | |||
BSP100T/R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical |