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    BSC05 Price and Stock

    Infineon Technologies AG BSC050N04LSGATMA1

    MOSFET N-CH 40V 18A/85A TDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSC050N04LSGATMA1 Reel 105,000 5,000
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    Mouser Electronics BSC050N04LSGATMA1 5,256
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    Rochester Electronics BSC050N04LSGATMA1 7,988 1
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    TME BSC050N04LSGATMA1 1
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    EBV Elektronik BSC050N04LSGATMA1 17 Weeks 5,000
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    Infineon Technologies AG BSC059N04LS6ATMA1

    MOSFET N-CH 40V 17A TDSON
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    DigiKey BSC059N04LS6ATMA1 Digi-Reel 34,843 1
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    BSC059N04LS6ATMA1 Reel 30,000 5,000
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    Mouser Electronics BSC059N04LS6ATMA1 41,662
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    Bristol Electronics BSC059N04LS6ATMA1 1,592
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    Rochester Electronics BSC059N04LS6ATMA1 5,000 1
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    Infineon Technologies AG BSC0502NSIATMA1

    MOSFET N-CH 30V 26A/100A TDSON
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    DigiKey BSC0502NSIATMA1 Reel 15,000 5,000
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    Avnet Americas BSC0502NSIATMA1 Reel 20 Weeks 5,000
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    Mouser Electronics BSC0502NSIATMA1 11,184
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    BSC0502NSIATMA1 4,984 33
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    Rochester Electronics BSC0502NSIATMA1 30,772 1
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    Infineon Technologies AG BSC0504NSIATMA1

    MOSFET N-CH 30V 21A/72A TDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSC0504NSIATMA1 Digi-Reel 13,156 1
    • 1 $1.27
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    BSC0504NSIATMA1 Cut Tape 13,156 1
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    BSC0504NSIATMA1 Reel 5,000 5,000
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    Mouser Electronics BSC0504NSIATMA1 32,063
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    BSC0504NSIATMA1 2,638 87
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    Arrow Electronics BSC0504NSIATMA1 5,000 20 Weeks 5,000
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    BSC0504NSIATMA1 5,000 20 Weeks 5,000
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    BSC0504NSIATMA1 Cut Strips 67 20 Weeks 1
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    Rochester Electronics BSC0504NSIATMA1 4,474 1
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    Infineon Technologies AG BSC057N08NS3GATMA1

    MOSFET N-CH 80V 16A/100A TDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSC057N08NS3GATMA1 Digi-Reel 9,229 1
    • 1 $2.54
    • 10 $1.638
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    BSC057N08NS3GATMA1 Cut Tape 9,229 1
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    BSC057N08NS3GATMA1 Reel 9,200 5,000
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    Avnet Americas BSC057N08NS3GATMA1 Reel 10,000 8 Weeks 5,000
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    Mouser Electronics BSC057N08NS3GATMA1 4,428
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    Arrow Electronics BSC057N08NS3GATMA1 10,000 8 Weeks 5,000
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    BSC057N08NS3GATMA1 Cut Strips 7 8 Weeks 1
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    Bristol Electronics BSC057N08NS3GATMA1 97
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    Rochester Electronics BSC057N08NS3GATMA1 47,694 1
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    Find more BSC05 price and stock on Findchips.com

    BSC05 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSC0500NSIATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 35A TDSON-8 Original PDF
    BSC0501NSIATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 29A 8TDSON Original PDF
    BSC0502NSIATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 26A TDSON-8 Original PDF
    BSC0503NSIATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 22A TDSON-8 Original PDF
    BSC0504NSIATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 21A TDSON-8 Original PDF
    BSC050N03LS G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS (on) (max) (@4.5V): 7.5 mOhm; ID (max): 79.0 A; Original PDF
    BSC050N03LSGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 80A TDSON-8 Original PDF
    BSC050N03MS G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS (on) (max) (@4.5V): 6.3 mOhm; ID (max): 80.0 A; Original PDF
    BSC050N03MSGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 80A TDSON-8 Original PDF
    BSC050N04LS G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS (on) (max) (@4.5V): 7.2 mOhm; ID (max): 85.0 A; Original PDF
    BSC050N04LSGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 85A TDSON-8 Original PDF
    BSC050N10NS5ATMA1 Infineon Technologies MOSFET N-CH 100V 16A/100A TDSON Original PDF
    BSC050NE2LS Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 39A TDSON-8 Original PDF
    BSC050NE2LSATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 39A TDSON-8 Original PDF
    BSC052N03LS Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 17A TDSON-8 Original PDF
    BSC052N03LSATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 17A TDSON-8 Original PDF
    BSC052N03S Infineon Technologies TRANS MOSFET N-CH 30V 50A 8P-TDSON-8 Original PDF
    BSC052N03S Infineon Technologies OptiMOS2 Power-Transistor Original PDF
    BSC052N03S G Infineon Technologies TRANS MOSFET N-CH 30V 18A 8TDSON-8 Original PDF
    BSC052N08NS5ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 95A 8TDSON Original PDF

    BSC05 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    057N03LS

    Abstract: BSC057N03LS JESD22 BSC057N03LS G
    Text: BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5.7 mΩ ID 71 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC057N03LS 057N03LS 057N03LS JESD22 BSC057N03LS G PDF

    BSC050N03LS

    Abstract: JESD22 050N03LS BSC050N03LS G
    Text: BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC050N03LS 050N03LS JESD22 050N03LS BSC050N03LS G PDF

    057n08ns

    Abstract: BSC057N08NS3 057N08N IEC61249-2-21 JESD22 BSC057N08NS3 G DD40
    Text: BSC057N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 5.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC057N08NS3 IEC61249-2-21 057N08NS 057n08ns 057N08N IEC61249-2-21 JESD22 BSC057N08NS3 G DD40 PDF

    057N03LS

    Abstract: BSC057N03LS G BSC057N03LS IEC61249-2-21 JESD22 BSC057N03
    Text: BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 5.7 mΩ • Optimized technology for DC/DC converters ID 71 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC057N03LS IEC61249-2-21 057N03LS 057N03LS BSC057N03LS G IEC61249-2-21 JESD22 BSC057N03 PDF

    050N03LS

    Abstract: 050N03L BSC050N03LS IEC61249-2-21 JESD22 gs2535
    Text: BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 5 mΩ • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC050N03LS IEC61249-2-21 050N03LS 050N03LS 050N03L IEC61249-2-21 JESD22 gs2535 PDF

    BSC059N04LS

    Abstract: 059N04LS BSC059N04 SMPS 40 JESD22
    Text: BSC059N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 5.9 mΩ ID 73 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC059N04LS 059N04LS 059N04LS BSC059N04 SMPS 40 JESD22 PDF

    Infineon

    Abstract: 057N03MS
    Text: BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5.7 mΩ V GS=4.5 V 7.2 ID


    Original     		BSC057N03MS 057N03MS Infineon 057N03MS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC059N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 5.9 mΩ ID 73 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC059N04LS 059N04LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC059N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 5.5 mΩ ID 73 A • Qualified according to JEDEC1 for target applications • Logic level / N-channel


    Original     		BSC059N03S Q67045-A5009 59N03S PDF

    59n03

    Abstract: 59N03S
    Text: BSC059N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 5.5 mΩ ID 73 A • Qualified according to JEDEC1 for target applications • Logic level / N-channel


    Original     		BSC059N03S 59N03S 59n03 59N03S PDF

    BSC052N03S

    Abstract: 052N03S
    Text: BSC052N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 5.2 mΩ ID 50 A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC052N03S Q67042-S4221 052N03S BSC052N03S 052N03S PDF

    Untitled

    Abstract: No abstract text available
    Text: n-Channel Power MOSFET OptiMOS BSC052N03LS Data Sheet 1.3, 2010-11-19 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSC052N03LS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together


    Original     		BSC052N03LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V VGS=10 V 5 mW VGS=4.5 V 6.3 ID • N-channel


    Original     		BSC050N03MS IEC61249-2-21 050N03MS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 5 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC050N03LS IEC61249-2-21 050N03LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC052N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS(on),max 5.2 mW ID 57 A QGD


    Original     		BSC052N03LS IEC61249-2-21 052N03LS PDF

    59N03S

    Abstract: 59n03
    Text: BSC059N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 5.5 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC059N03S BSC059N03S Q67042-S4222 59N03S 59N03S 59n03 PDF

    050NE2LS

    Abstract: No abstract text available
    Text: n-Channel Power MOSFET OptiMOS BSC050NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSC050NE2LS 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together


    Original     		BSC050NE2LS OptiMOSTM25V 050NE2LS PDF

    59N03S

    Abstract: BSC059N03S BSC059N03S G 59n0 59n03 IEC61249-2-21 JESD22
    Text: BSC059N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 5.5 mΩ • Optimized technology for notebook DC/DC converters ID 73 A • Qualified according to JEDEC1 for target applications PG-TDSON-8


    Original     		BSC059N03S IEC61249-2-21 59N03S 59N03S BSC059N03S G 59n0 59n03 IEC61249-2-21 JESD22 PDF

    52N03

    Abstract: 52N03S PG-TDSON-8 BSC052N03S IEC61249-2-21 JESD22 BSC052N03S G
    Text: BSC052N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 5.2 mΩ • Optimized technology for notebook DC/DC converters ID 80 A • Qualified according to JEDEC1 for target applications PG-TDSON-8


    Original     		BSC052N03S IEC61249-2-21 52N03S 52N03 52N03S PG-TDSON-8 IEC61249-2-21 JESD22 BSC052N03S G PDF

    059N04LS

    Abstract: BSC059N04LS IEC61249-2-21 JESD22 BSC059N04LS G 059N04LS G c73v
    Text: BSC059N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 5.9 mΩ • Optimized technology for DC/DC converters ID 73 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC059N04LS IEC61249-2-21 059N04LS 059N04LS IEC61249-2-21 JESD22 BSC059N04LS G 059N04LS G c73v PDF

    057n08ns

    Abstract: 057N08N JESD22
    Text: BSC057N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 5.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC057N08NS3 057N08NS 057n08ns 057N08N JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V VGS=10 V 5.7 mW VGS=4.5 V 7.2 ID • N-channel


    Original     		BSC057N03MS IEC61249-2-21 057N03MS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC050NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 25 V RDS(on),max 5.0 mW ID 58 A QGD


    Original     		BSC050NE2LS IEC61249-2-21 050NE2LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5 mΩ V GS=4.5 V 6.3 ID • N-channel


    Original     		BSC050N03MS 050N03MS PDF