BG3123 |
|
Infineon Technologies
|
DUAL N-Channel MOSFET Tetrode |
|
Original |
PDF
|
BG3123 |
|
Infineon Technologies
|
Dual Semi Biased; Package: PG-SOT363-6; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 25.0 dB; F (typ): 1.3 dB; |
|
Original |
PDF
|
BG3123E6327 |
|
Infineon Technologies
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT-363 |
|
Original |
PDF
|
BG3123E6327 |
|
Infineon Technologies
|
Transistor Mosfet N-CH 240V 0.29A 4SOT-89 T/R |
|
Original |
PDF
|
BG3123E6327HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT-363 |
|
Original |
PDF
|
BG3123H6327 |
|
Infineon Technologies
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 |
|
Original |
PDF
|
BG3123H6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 |
|
Original |
PDF
|
BG3123R |
|
Infineon Technologies
|
DUAL N-Channel MOSFET Tetrode |
|
Original |
PDF
|
BG3123R |
|
Infineon Technologies
|
Dual Semi Biased; Package: PG-SOT363-6; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 25.0 dB; F (typ): 1.3 dB; |
|
Original |
PDF
|
BG3123RE6327 |
|
Infineon Technologies
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V SOT-363 |
|
Original |
PDF
|
BG3123RE6327 |
|
Infineon Technologies
|
Transistor Mosfet N-CH 240V 0.29A 4SOT-89 T/R |
|
Original |
PDF
|
BG3123RE6327HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V SOT-363 |
|
Original |
PDF
|
BG3123RH6327 |
|
Infineon Technologies
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 |
|
Original |
PDF
|
BG3123RH6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 |
|
Original |
PDF
|