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Infineon Technologies AG BFR183E6327HTSA1 RF TRANS NPN 12V 8GHZ SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFR183E6327HTSA1	Digi-Reel	18,042		1	1 $0.2 10 $0.139 100 $0.1041 1000 $0.08609 10000 $0.08609	Buy Now
	BFR183E6327HTSA1	Cut Tape	18,042		1	1 $0.2 10 $0.139 100 $0.1041 1000 $0.08609 10000 $0.08609	Buy Now
	BFR183E6327HTSA1	Reel	18,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.08082	Buy Now
Avnet Americas	BFR183E6327HTSA1	Reel		4 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	BFR183E6327HTSA1		9,086			1 $0.2 10 $0.122 100 $0.091 1000 $0.087 10000 $0.074	Buy Now
Verical	BFR183E6327HTSA1		54,000		9,000	1 - 10 - 100 - 1000 - 10000 $0.0874	Buy Now
	BFR183E6327HTSA1		15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0729	Buy Now
	BFR183E6327HTSA1		9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0667	Buy Now
	BFR183E6327HTSA1		6,455		85	1 - 10 - 100 $0.0908 1000 $0.0823 10000 $0.073	Buy Now
	BFR183E6327HTSA1		5,910		322	1 - 10 - 100 - 1000 $0.0906 10000 $0.0894	Buy Now
Arrow Electronics	BFR183E6327HTSA1		15,000	4 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.0722	Buy Now
	BFR183E6327HTSA1		9,000	4 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.0667	Buy Now
	BFR183E6327HTSA1	Cut Strips	6,455	4 Weeks	1	1 $0.2 10 $0.1257 100 $0.0908 1000 $0.0823 10000 $0.073	Buy Now

Newark	BFR183E6327HTSA1	Cut Tape			5	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BFR183E6327HTSA1				1	1 $0.0754 10 $0.0754 100 $0.0709 1000 $0.0641 10000 $0.0641	Buy Now
Chip1Stop	BFR183E6327HTSA1	Cut Tape	5,910			1 - 10 - 100 $0.0835 1000 $0.0725 10000 $0.0717	Buy Now
EBV Elektronik	BFR183E6327HTSA1			5 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFR-183T-E6327 RF TRANS NPN 12V 8GHZ SC75
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFR-183T-E6327	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.10042	Buy Now
Infineon Technologies AG BFR-183W-E6327 RF TRANS NPN 12V 8GHZ SOT323-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFR-183W-E6327	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.13262	Buy Now
	BFR-183W-E6327	Cut Tape			1	1 $0.33 10 $0.33 100 $0.33 1000 $0.33 10000 $0.33	Buy Now
	BFR-183W-E6327	Digi-Reel			1	1 $0.33 10 $0.33 100 $0.33 1000 $0.33 10000 $0.33	Buy Now
Infineon Technologies AG BFR183WH6327XTSA1 RF TRANS NPN 12V 8GHZ SOT323-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFR183WH6327XTSA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFR 183 E6327 RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BFR 183 E6327		9,121			1 $0.43 10 $0.334 100 $0.208 1000 $0.109 10000 $0.085	Buy Now
Verical	BFR 183 E6327		9,000		477	1 - 10 - 100 - 1000 $0.1535 10000 $0.1449	Buy Now

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BFR183 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
BFR183	Infineon Technologies	NPN Silicon RF Transistor	Original	PDF
BFR183	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BFR183	Siemens	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)	Original	PDF
BFR183	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BFR183E6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SOT-23	Original	PDF
BFR183E6327HTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SOT-23	Original	PDF
BFR183F	Infineon Technologies	NPN Silicon RF Transistor	Original	PDF
BFR183FE6327	Infineon Technologies	TRANS GP BJT NPN 12V 0.065A 3 pin SOT-23 T/R	Original	PDF
BFR183T	Infineon Technologies	NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC75 package	Original	PDF
BFR183T	Vishay Telefunken	Silicon NPN Planar RF Transistor	Original	PDF
BFR 183T E6327	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SC-75	Original	PDF
BFR183TE6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SC-75	Original	PDF
BFR183TE6327	Infineon Technologies	TRANS GP BJT NPN 12V 0.065A 3SC-75 T/R	Original	PDF
BFR183TF	Vishay Siliconix	Transistors, RF & AF	Original	PDF

BFR183TW	Vishay Intertechnology	Silicon NPN Planar RF Transistor	Original	PDF
BFR183TW	Vishay Telefunken	Silicon NPN Planar RF Transistor	Original	PDF
BFR183TW-GS08	Vishay	TRANS GP BJT NPN 10V 0.065A 3SOT-323 T/R	Original	PDF
BFR183W	Infineon Technologies	NPN Silicon RF Transistor	Original	PDF
BFR183W	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BFR183W	Siemens	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)	Original	PDF

BFR183 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	PDF	BFR183TF OT-490 D-74025 28-Apr-05
BFR183T Abstract: Telefunken Text: BFR183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain	Original	PDF	BFR183T D-74025 17-Apr-96 BFR183T Telefunken
Untitled Abstract: No abstract text available Text: BFR183T NPN Silicon RF Transistor Preliminary data 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR183T VPS05996
BFR183TF Abstract: No abstract text available Text: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	PDF	BFR183TF OT-490 OT-490 D-74025 30-Aug-04 BFR183TF
Untitled Abstract: No abstract text available Text: BFR183W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free RoHS compliant and halogen-free package with visible leads	Original	PDF	BFR183W AEC-Q101 OT323
BFR183T Abstract: BFR183TW Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure	Original	PDF	BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99
BFR183T Abstract: BFR183TW Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure	Original	PDF	BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99
Untitled Abstract: No abstract text available Text: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at	Original	PDF	BFR183T BFR183TW 2002/95/EC 2002/96/EC OT-23 BFR183TW OT-323 D-74025 28-Apr-05
BFR183 Abstract: BCW66 Text: BFR183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description	Original	PDF	BFR183 BFR183 BCW66
BFR183T Abstract: BFR183TW Text: BFR183T/BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure	Original	PDF	BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99
BFR18 Abstract: BFR183W VSO05561 SPICE 2G6 Text: BFR183W NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFR183W VSO05561 OT323 BFR18 BFR183W VSO05561 SPICE 2G6
Untitled Abstract: No abstract text available Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure	Original	PDF	BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99
BFR183T Abstract: BFR183TW Text: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at	Original	PDF	BFR183T BFR183TW 2002/95/EC 2002/96/EC BFR183T OT-23 OT-323 08-Apr-05 BFR183TW
transistor marking RHs Abstract: transitor RF 98 BFR183F Text: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR183F transistor marking RHs transitor RF 98 BFR183F

Untitled Abstract: No abstract text available Text: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR183T
Untitled Abstract: No abstract text available Text: BFR183T NPN Silicon RF Transistor Preliminary data 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR183T VPS05996
BFR183W Abstract: No abstract text available Text: BFR183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR183W OT323 BFR183W
BFR183TF Abstract: No abstract text available Text: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	PDF	BFR183TF OT490 OT490 D-74025 23-Sep-02 BFR183TF
Untitled Abstract: No abstract text available Text: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	PDF	BFR183TF OT-490 08-Apr-05
Untitled Abstract: No abstract text available Text: BFR183 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFR183 VPS05161
Untitled Abstract: No abstract text available Text: BFR183W NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFR183W VSO05561 OT323
Untitled Abstract: No abstract text available Text: BFR183 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFR183 VPS05161
Untitled Abstract: No abstract text available Text: BFR183T/BFR183TW Y Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 2 mA to 30 mA. Features	OCR Scan	PDF	BFR183T/BFR183TW 183TW D-74025 20-Jan-99
marking RH Abstract: No abstract text available Text: Tem ic BFR183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor £ Electrostatic sensitive device. Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 inA. Features	OCR Scan	PDF	BFR183T 1S21e 17-Apr-96 marking RH

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BFR183 Datasheets (25)

BFR183 Datasheets Context Search

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