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    BF908T/R Search Results

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    BF908T/R Price and Stock

    NXP Semiconductors BF908T/R

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
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    Vyrian BF908T/R 48
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    BF908T/R Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF908T/R NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS Original PDF
    BF908TR Philips Semiconductors Dual-gate MOS-FET Original PDF
    BF908T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF