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    BF556AT/R Search Results

    BF556AT/R Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF556AT/R NXP Semiconductors N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms Original PDF
    BF556A T/R Philips Semiconductors FET Transistor, N Channel, ID 7mA, Tape and Reel Original PDF
    BF556ATR Philips Semiconductors N-channel silicon junction field-effect transistor Original PDF