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Infineon Technologies AG BF1009SE6327HTSA1 RF MOSFET 9V SOT143
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF1009SE6327HTSA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC BF1009SRE6327HTSA1 RF MOSFET 9V SOT143R
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DigiKey	BF1009SRE6327HTSA1	Bulk			2,077	1 - 10 - 100 - 1000 - 10000 $0.14	Buy Now
Infineon Technologies AG BF1009SRE6327HTSA1 RF MOSFET 9V SOT143R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF1009SRE6327HTSA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BF1009SRE6327HTSA1		8		1	1 $0.1389 10 $0.1389 100 $0.1306 1000 $0.1181 10000 $0.1181	Buy Now
Siemens BF1009SR-E7730 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BF1009SR-E7730		111,000			1 $0.27 10 $0.27 100 $0.27 1000 $0.27 10000 $0.108	Buy Now
	BF1009SR-E7730		111,000			1 $0.27 10 $0.27 100 $0.27 1000 $0.27 10000 $0.108	Buy Now
Siemens BF1009SR-E6327 POWER FIELD-EFFECT TRANSISTOR, 0.025A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BF1009SR-E6327		2,675			1 $0.77 10 $0.77 100 $0.77 1000 $0.154 10000 $0.1155	Buy Now
	BF1009SR-E6327		2,675			1 $0.77 10 $0.77 100 $0.77 1000 $0.154 10000 $0.1155	Buy Now

BF1009S Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
BF1009S	Infineon Technologies	TRANS MOSFET N-CH 12V 0.025A 4SOT-143	Original	PDF
BF1009S	Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF
BF1009S	Infineon Technologies	Single Full Biased; Package: PG-SOT143-4; I_D (max): 25.0 mA; P_tot (max): 200.0 mW; g_fs (typ): 30.0 mS; G_p (typ): 22.0 dB; F (typ): 1.4 dB;	Original	PDF
BF1009S	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BF1009S	Siemens	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)	Original	PDF
BF1009SE6327	Infineon Technologies	FET Transistor, Enhancement, N Channel, ID 0.025A, Tape And Reel	Original	PDF
BF1009SE6327	Infineon Technologies	RF FETs, Discrete Semiconductor Products, MOSFET N-CH 12V 25MA SOT-143	Original	PDF
BF1009SE6327HTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 12V 25MA SOT-143	Original	PDF
BF1009SR	Infineon Technologies	Dual-MOS FET Monolithic Integrated Circuit	Original	PDF
BF1009SR	Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF
BF1009SR	Infineon Technologies	Single Full Biased; Package: PG-SOT143-4; I_D (max): 25.0 mA; P_tot (max): 200.0 mW; g_fs (typ): 30.0 mS; G_p (typ): 22.0 dB; F (typ): 1.4 dB;	Original	PDF
BF1009SRE6327	Infineon Technologies	TRANS MOSFET N-CH 12V 0.025A 4SOT-143R	Original	PDF
BF1009SRE6327	Infineon Technologies	RF FETs, Discrete Semiconductor Products, MOSFET N-CH 12V 25MA SOT-143R	Original	PDF
BF1009SRE6327HTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 12V 25MA SOT-143R	Original	PDF

BF1009SW	Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF
BF1009SW	Infineon Technologies	TRANS MOSFET N-CH 12V 0.025A 4SOT-343	Original	PDF

BF1009S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BF1009SR Abstract: No abstract text available Text: BF1009SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009SR EHA07215 OT143R Dec-04-2002 200MHz BF1009SR
BF1009SW Abstract: No abstract text available Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW
BF1009SW Abstract: BF1009S BF1009SR BF1009W Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S. EHA07215 BF1009S OT143 BF1009SR OT143R Feb-18-2004 200MHz BF1009SW BF1009S BF1009SR BF1009W
BF1009S Abstract: VPS05178 Text: BF1009S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9V Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1009S VPS05178
BF1009SW Abstract: marking g1s Text: BF1009SW Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009SW VPS05605 EHA07215 OT343 Jun-28-2001 200MHz BF1009SW marking g1s
BF1009SW Abstract: BF1009 marking code g2s Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW BF1009 marking code g2s
Untitled Abstract: No abstract text available Text: BF1009S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	PDF	BF1009S. BF1009S OT143 BF1009SR OT143R
sot143 marking code g2 Abstract: p 1S marking SOT143 BF1009S BF1009SR BFP181 BFP181R Text: BF1009S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	PDF	BF1009S. BF1009S OT143 BF1009SR OT143R sot143 marking code g2 p 1S marking SOT143 BF1009S BF1009SR BFP181 BFP181R
BF1009SW Abstract: No abstract text available Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S. BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W 10mponents BF1009SW
MRF581 Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92 Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk Roelofsǈޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ	Original	PDF
Motorola transistor smd marking codes Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56 Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.	Original	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	PDF	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
uaf4000 Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャーはじめに	Original	PDF	20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	PDF	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

BFG591 amplifier Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 Text: RF手册第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品恩智浦RF手册令设计更简易恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP	Original	PDF	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
RF1119 Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,	Original	PDF	PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
2SK43 transistor Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163 Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written	Original	PDF
Audio Power Amplifier MOSFET TOSHIBA Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows	Original	PDF
Sony Semiconductor Replacement Handbook 1991 Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony Text: Philips RF Manual product & design manual for RF small signal discretes 3 edition July 2003 rd / discretes/documentation/rf_manual Document number: 4322 252 06384 Date of release: July 2003 3rd edition	Original	PDF
STF12A80 Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer	Original	PDF	02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
siemens MOSFET 14 Abstract: Marking G1s Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	BF1009S EHA07215 1009S Q62702-F1628 OT-143 200MHz 200MHz siemens MOSFET 14 Marking G1s
Untitled Abstract: No abstract text available Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network , Drain AGC o- HF X o- . HF Output + DC G2 I G1 1 Input GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	BF1009S EHA07215 1009S Q62702-F1628 T-143
BDP 284 Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529 Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05	OCR Scan	PDF	3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
diode S6 78A Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14	OCR Scan	PDF	O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

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BF1009S Search Results

BF1009S Price and Stock

Infineon Technologies AG BF1009SE6327HTSA1

Rochester Electronics LLC BF1009SRE6327HTSA1

Infineon Technologies AG BF1009SRE6327HTSA1

Siemens BF1009SR-E7730

Siemens BF1009SR-E6327

BF1009S Datasheets (16)

BF1009S Datasheets Context Search

BF1009SR

BF1009SW

BF1009SW

BF1009S

BF1009SW

BF1009SW

Untitled

sot143 marking code g2

BF1009SW

MRF581

Motorola transistor smd marking codes

BC548 TRANSISTOR REPLACEMENT

uaf4000

smd code book

BFG591 amplifier

RF1119

2SK43 transistor

Audio Power Amplifier MOSFET TOSHIBA

Sony Semiconductor Replacement Handbook 1991

STF12A80

siemens MOSFET 14

Untitled

BDP 284

diode S6 78A