BDT91F
Abstract: BDT92F BDT94F BDT95F BDT96F BDT96
Text: BDT92F; BDT94F BDT96F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F. QUICK REFERENCE DATA BDT92F 94F 96F -VC BO
|
OCR Scan
|
PDF
|
BDT92F;
BDT94F
BDT96F
aSOT186
BDT91F,
BDT93Fand
BDT95F.
bdt92f
DO3470S
BDT91F
BDT95F
BDT96F
BDT96
|
Untitled
Abstract: No abstract text available
Text: BDT92F; BDT94F BDT96F _ y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.
|
OCR Scan
|
PDF
|
BDT92F;
BDT94F
BDT96F
aSOTl86
BDT91F,
BDT93Fand
BDT95F.
BDT92F
|
T-33-O
Abstract: BDT94F BDT91F BDT92F BDT95F BDT96F 043341
Text: BDT92F; BDT94F BDT96F I SbE T> PHILIPS INTERNATIONAL m 7110ÖEb 004334G 513 BIPHIN SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each inaSOT186 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.
|
OCR Scan
|
PDF
|
BDT92F;
BDT94F
BDT96F
711002b
DQ4334G
T-33-O
inaSOT186
BDT91F,
BDT93Fand
BDT95F.
T-33-O
BDT91F
BDT92F
BDT95F
BDT96F
043341
|
2009-6F
Abstract: No abstract text available
Text: BDT92F; BDT94F BDT96F PHILIPS INTERNATIONAL SbE ]> • 711DÖEfc> Q 0 4 3 3 M D S13 ■ P H I N T -3 3 -O t SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOT186 envelope with an electrically insulated mounting base.
|
OCR Scan
|
PDF
|
BDT92F;
BDT94F
BDT96F
aSOT186
BDT91F,
BDT93Fand
BDT95F.
BDT92F
711Qfl5b
T-33-09
2009-6F
|