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    BDB01D Search Results

    BDB01D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDB01D Motorola One Watt Amplifier Transistors Original PDF
    BDB01D Motorola European Master Selection Guide 1986 Scan PDF
    BDB01D Motorola 1 Watt Amplifier Transistors Scan PDF
    BDB01D Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BDB01D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDB01A

    Abstract: BDB01B BDB01C BDB01D
    Text: MOTOROLA Order this document by BDB01C/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors BDB01C,D NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 1 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol BDB01C BDB01D Unit Collector – Emitter Voltage


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    PDF BDB01C/D BDB01C 226AE) BDB01C BDB01D BDB01C/D* BDB01A BDB01B BDB01D

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


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    PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    MMBF4856

    Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


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    PDF MPQ3906 Therm218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MMBF4856 BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L

    MAD130P

    Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    PDF MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72

    BC237

    Abstract: 2N5670 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode 3 CATHODE BAS21LT1 Motorola Preferred Device 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Symbol


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    PDF BAS21LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N5670 equivalent

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. P–CHANNEL ENHANCEMENT–MODE


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    PDF MGSF1P02LT1 ENHANCEME218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: 2N7000 Fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


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    PDF 2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet

    BC237

    Abstract: 2n6426 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage


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    PDF 2N6426* 2N6427 226AA) Juncti218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2n6426 equivalent

    BC237

    Abstract: mps4123 opposite transistor BC107 specifications MPS3646 mps3646 equivalent transistor equivalent 2n5551 transistor equivalent book 2N5401 2n3819 equivalent transistor transistor 2n5551 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3646 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage VCES


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    PDF MPS3646 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 mps4123 opposite transistor BC107 specifications MPS3646 mps3646 equivalent transistor equivalent 2n5551 transistor equivalent book 2N5401 2n3819 equivalent transistor transistor 2n5551 equivalent

    BC237

    Abstract: marking code N9 8-pin
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90


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    PDF 416/SC DAN222 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 marking code N9 8-pin

    2n5462 replacement

    Abstract: motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 2N5461 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C


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    PDF 2N5460 2N5461 2N5462 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n5462 replacement motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819

    mpsa16

    Abstract: motorola transistor 2N2907 BC237 motorola transistor dpak marking 350
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPSA17 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage VEBO 15 Vdc Collector Current – Continuous


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    PDF MPSA17 226AA) E218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 mpsa16 motorola transistor 2N2907 BC237 motorola transistor dpak marking 350

    MPS918 equivalent

    Abstract: BC237 MPS3563 transistor MPS3563
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage VCEO 15 12 Vdc Collector – Base Voltage


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    PDF MPS918* MPS3563 MPS918 MPS3563 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 MPS918 equivalent BC237 MPS3563 transistor

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54ALT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


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    PDF BAT54ALT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPN3404 equivalent

    Abstract: transistor TO-92 bc108 BC237 bc140-10 to92 BC107B to92 2N2904 transistor TO92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Pin Diode MPN3404 This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. It is supplied in a cost–effective TO–92 type plastic package for economical, high–volume consumer and industrial


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    PDF MPN3404 226AC) Tempera218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPN3404 equivalent transistor TO-92 bc108 BC237 bc140-10 to92 BC107B to92 2N2904 transistor TO92

    BC237

    Abstract: transistor b 595
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor NPN Silicon MPS6717 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–05, STYLE 1 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage


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    PDF MPS6717 226AE) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor b 595

    MPSW45A replacement

    Abstract: MPSW45 equivalent BF245 application note BC237 alternative bipolar transistors book Characteristic curve BC107
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPSW45 MPSW45A* COLLECTOR 3 BASE 2 *Motorola Preferred Device EMITTER 1 1 MAXIMUM RATINGS 2 Rating Symbol MPSW45 MPSW45A Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage


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    PDF MPSW45 MPSW45A* MPSW45A 226AE) Ambien218A MSC1621T1 MSC2404 MSD1819A MV1620 MPSW45A replacement MPSW45 equivalent BF245 application note BC237 alternative bipolar transistors book Characteristic curve BC107

    2N2222A motorola

    Abstract: BC237 H2A transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package


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    PDF 70/SOT inch/3000 MSB1218A-RT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N2222A motorola BC237 H2A transistor

    K 2056 transistor

    Abstract: BC237 BF245 TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3454VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3454VT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 K 2056 transistor BC237 BF245 TRANSISTOR

    2N3819 fet

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


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    PDF 2N7002LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 fet BC237

    BC237

    Abstract: S 178 A INTEGRATED CIRCUIT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPQ7041 MPQ7042 MPQ7043* Quad Amplifier Transistors NPN Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 5 *Motorola Preferred Device 6 7 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7041 MPQ7042 MPQ7043 Unit Collector – Emitter Voltage


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    PDF MPQ7041 MPQ7042 MPQ7043* MPQ7043 MSC1621T1 MSC2404 MSD1819A MV1620 BC237 S 178 A INTEGRATED CIRCUIT

    2n3819 replacement

    Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical


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    PDF MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 2n3819 replacement transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement

    transistor BF245

    Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


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    PDF OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363

    B01D

    Abstract: No abstract text available
    Text: BDBOIC'D MAXIMUM RATINGS Symbol BDB01C BDB01D Collector-Emitter V oltage v CEO 80 100 V dc Collector-Base V oltage VCES 80 100 Vdc Rating Em itter-Base Voltage Unit v EBO 5.0 Collector Current — C o n tin u o u s 'C 0.5 Ade Total Device Dissip ation PD 1.0


    OCR Scan
    PDF BDB01C BDB01D O-226AE) B01D