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    BA317 Price and Stock

    JRH ELECTRONICS 805-061-16MT8-7BA317

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    DigiKey 805-061-16MT8-7BA317 1
    • 1 $1544.54
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    • 100 $1359.1924
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    JRH ELECTRONICS 805-061-16NF8-6BA317

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    DigiKey 805-061-16NF8-6BA317 1
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    JRH ELECTRONICS 805-061-16Z18-4BA317

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    DigiKey 805-061-16Z18-4BA317 1
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    JRH ELECTRONICS 805-061-16M12-26BA317

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    DigiKey 805-061-16M12-26BA317 1
    • 1 $2158.03
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    • 100 $1899.0668
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    JRH ELECTRONICS 805-061-16M13-31BA317

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    DigiKey 805-061-16M13-31BA317 1
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    BA317 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA317 Philips Semiconductors High-speed diodes Original PDF
    BA317 Mullard Quick Reference Guide 1977/78 Scan PDF
    BA317 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA317 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA317 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BA317 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BA317 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BA317 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA317 Unknown Cross Reference Datasheet Scan PDF
    BA317 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BA317 National Semiconductor Diode - Pro Electron Series Scan PDF
    BA317 National Semiconductor Diode Pro Electron Series Scan PDF
    BA317 National Semiconductor General Purpose Diodes Scan PDF
    BA317 National Semiconductor General Purpose Diodes, Glass Package Scan PDF
    BA317 Philips Semiconductors High-speed diodes Scan PDF
    BA3170 ROHM Trickle-charge IC for two-cell, lithium-ion batteries Original PDF
    BA317T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BA317 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T20 96 diode

    Abstract: BA318 BA316 BA317 0D2T xfsm IEC134
    Text: b'IE ]> • ^ 5 3 ^ 3 1 0D2bl5b 2TT N AUER PHILIPS/DISCRETE IAPX BA316 BA317 BA318 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­


    OCR Scan     		bS3131 BA316 BA317 BA318 DO-35 BA316, BA317 BA318. BA316 T20 96 diode BA318 0D2T xfsm IEC134 PDF

    BA317

    Abstract: MAM246 BA316 BA318
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 FEATURES DESCRIPTION • Hermetically sealed leaded glass


    Original     		M3D176 BA316; BA317; BA318 DO-35) BA316, BA317, BA317 MAM246 BA316 BA318 PDF

    BA3170

    Abstract: No abstract text available
    Text: Regulator ICs Trickle-charge IC for two-cell, lithium-ion batteries BA3170 The BA3170 is a trickle-charge IC developed for two-cell, lithium-ion batteries.The IC includes a charge control circuit, a charge output transistor, and an LED driver for showing the charging status.


    Original     		BA3170 BA3170 PDF

    Untitled

    Abstract: No abstract text available
    Text: blE J> m bbS3131 Q02blSb 51T • APX BA316 BA317 N AMER PHILIPS/DISCRETE BA318 V y 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­


    OCR Scan     		bbS3131 Q02blSb BA316 BA317 BA318 DO-35 BA316, BA317 BA318. PDF

    Untitled

    Abstract: No abstract text available
    Text: Regulator ICs Trickle-charge IC for two-cell, lithium-ion batteries BA3170 The BA3170 is a trickle-charge IC developed for two-cell, lithium-ion batteries.The IC includes a charge control circuit, a charge output transistor, and an LED driver for showing the charging status.


    Original     		BA3170 BA3170 PDF

    Untitled

    Abstract: No abstract text available
    Text: Regulator ICs Trickle-charge 1C for two-cell, lithium-ion batteries BA3170 T h e B A 3 1 70 is a tric k le -c h a rg e IC d e ve lo p e d fo r tw o -ce ll, lith iu m -io n b a tte rie s.T h e IC in clu d e s a ch a rg e co n tro l circuit, a c h a rg e o u tp u t tran sisto r, and an LED d riv e r fo r sh o w in g th e ch a rg in g status.


    OCR Scan     		BA3170 HSIP-B12 PDF

    BA318

    Abstract: BA316 BA317
    Text: Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass


    OCR Scan     		BA316; BA317; BA318 DO-35) BA316, BA317, BA318 711002b BA316 BA317 PDF

    BA316

    Abstract: BA317 BA318 MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318


    Original     		M3D176 BA316; BA317; BA318 DO-35) BA316, BA317, BA316 BA317 BA318 MAM246 PDF

    BAV234

    Abstract: BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES ratings type number characteristics Vr max. V Ip max. (mA) BA220 BA221 BA316 BA317


    OCR Scan     		BA220 BA221 BA316 BA317 BA318 BAV10 BAV18 BAV19 BAV20 BAV21 BAV234 BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914 PDF

    tda5560

    Abstract: TEA5550 TEA5560 BA317 MMK11E11 sft468 RADIO TUNING DIODE car radio circuit board layout
    Text: D EV ELO PM EN T SA M PLE DATA TEA 5550 This in form atio n is d erived from d evelopm ent samples made available for evaluation. It does n ot necessarily im ply th at the device w ill go in to regular p ro du ction . AM C AR R A D IO R f E C E IV E R C IR C U IT


    OCR Scan     		TEA5550 TEA5550 tda5560 TEA5560 BA317 MMK11E11 sft468 RADIO TUNING DIODE car radio circuit board layout PDF

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    C5V6 ph

    Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
    Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER


    Original     		1N821 1N4733A 1N821A 1N4734A 1N823 1N4735A 1N823A C5V6 ph C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379 PDF

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204 PDF

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507 PDF

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 PDF

    BAV46

    Abstract: BAS46 cl8960 X-band doppler radar module Gunn Diode at power supply circuit doppler radar module Gunn Diode x-band BAV46 diode gunn diode radar module DO-23
    Text: 7'¿fl OC X BAS46 X-BAND MIXER/DETECTOR DIODE Silicon S chottky barrier diode in DO-23 outline specially designed fo r use in Doppler radar systems and intruder alarms where low 1 /f noise and high sensitivity are required. May be used fo r both mixer and detector applications. This device is a direct replacement fo r the BAV46 and has an all-bonded


    OCR Scan     		BAS46 DO-23 BAV46 BAS46 cl8960 X-band doppler radar module Gunn Diode at power supply circuit doppler radar module Gunn Diode x-band BAV46 diode gunn diode radar module PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- PDF

    BA379

    Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
    Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8S1215ETC K8S1215EBC K8S1215EZC 512Mb 64FBGA, 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh 0110000h-011FFFFh BA379 BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258 PDF