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    FUJITSU Limited MB8117400A-70PJ

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    B8117400A Datasheets Context Search

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    jeida dram 88 pin

    Abstract: No abstract text available
    Text: MEMORY DRAM CARD JEIDA * [DRAM Card Guide Line Ver. 2.0] conformable MB98B7515/7516/7517/7518 DYNAMIC RANDOM ACCESS MEMORY CARD 16 M/32 M - BYTE • DESCRIPTION The MB98B7515 is a DRAM Card 4,194,304 words x 32 bits with eight M B8117400A’s mounted. The MB98B7516 is a DRAM Card (4,194,304 words x 36 bits) with eight B8117400A’s and four MB814100A


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    PDF MB98B7515/7516/7517/7518 MB98B7515 B8117400A MB98B7516 MB8117400A MB814100A MB98B7517 MB98B7518 jeida dram 88 pin

    8117400A

    Abstract: No abstract text available
    Text: cP FUJITSU DS05-11210-1E DATA SHEET MEMORY CMOS 8M x 32 FAST PAGE MODE DRAM MODULE MB85392A -60/-70 CMOS 4M x 32 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu M B 85392A is a fully decoded, C M O S Dynamic Random Access Mem ory D R A M module consisting of sixteen


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    PDF DS05-11210-1E MB85392A 5392A 117400A MSS-72P-P80) 72071SC 8117400A

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM B8117400A-50/-60/-70 CMOS 4,194,304 x 4 BIT Fast Mode Dynamic RAM • DESCRIPTION The Fujitsu B8117400A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The B8117400A features a “fast page” mode of operation whereby high­


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    PDF MB8117400A-50/-60/-70 MB8117400A 024-bits B8117400A MB8117400A-50/MB8117400A-60/MB8117400A-70 FPT-26P-M05)

    Untitled

    Abstract: No abstract text available
    Text: <p June 1996 Revision 1.0 HATA fíH F F T - FSA8UN3642- 60/70 J(G/S)-S 32MByte (8M x 36) CMOS DRAM Module General Description The FSA8UN3642-(60/70)J(G/S)-S is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36 bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.


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    PDF FSA8UN3642- 32MByte 32-megabyte 72-pin, B8117400A- MB814100C- 60ation:

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 0 1 7 5 -2 E MEMORY CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM B8117400A-50/-60/-70 CMOS 4,194,304 x4 BIT Fast Mode Dynamic RAM • DESCRIPTION The Fujitsu B8117400A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory


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    PDF MB8117400A-50/-60/-70 MB8117400A 024-bits B8117400A MB8117400A-50/MB8117400A-60/MB8117400A-70 FPT-26P-M05)

    MB8117400A

    Abstract: No abstract text available
    Text: BIBBI CMOS 4,194,304 x 4 BIT Fast Mode Dynamic RAM • DESCRIPTION The Fujitsu B8117400A is a fully decoded CMOS Dynamic RAM DRAM thatifi&ntains 16,777,216 memory cells accessible in 4-bit increments. The B8117400A features a ‘la st page” misde^of operation whereby high­


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    PDF MB8117400A 024-bits B8117400A F9703

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS I ll 1 11 CMOS 4M x 64 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB8504D064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting ot sixteen B8117400A devices. The MB8504D064AA is optimized for those applications requiring


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    PDF MB8504D064AA MB8117400A 168-pad F9704

    Untitled

    Abstract: No abstract text available
    Text: - PRELIMINARYMarch 1995 Edition 3.0 PRO DUCT PROFILE SHEET — FUJITSU M B 8 1 1 7 4 0 0 A -50/-60/-70 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu B8117400A is a fully decoded CMOS Dynamic RAM DRAM that contains


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    PDF MB8117400A 024-bits 374175b Q011217

    7400A

    Abstract: B8-11
    Text: - PRELIMINARY - March 1995 Edition 3.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 7 4 0 0 A -50/-60/-70 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMO S 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu B8117400A is a fully decoded CM OS Dynamic RAM DRAM that contains


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    PDF MB8117400A B8117400A P-DRAM-DS-20099-11/95 7400A B8-11

    40j2

    Abstract: B8117805A-70
    Text: DRAM 3 • DRAM - Normal Voltage Versions (CMOS) Vcc= +5V±10%, T a=0°C to +70°C Organization (Wxb) 4M x4 2M x8 1M x16 Part Number Cycle Time min. (ns) Power Consumption max. (mW) Operating M B8116400A-60 60[15]*1 110[40]*3 412.5 M B8116400A-70 70[17]’1


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