AS4VC256K16E0 Search Results

Contextual Info: Advance information •■ AS4VC256K16E0 A 2.5V 256KX 16 CMOS DRAM EDO Features • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 w ords x 16 bits - RAS-only or CAS-before-RAS refresh or self refresh • H ig h speed - 45/60 ns KAS access tim e

PA 13001

Abstract: 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 256KX16 Rmw46 RS 13001 13001 s 60 HA 13001
Contextual Info: Advance information •■ AS4VC256K16E0 1 2.5V 2 5 6 K X 16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 4 5 / 6 0 ns RAS access tim e - 2 0 / 2 5 ns c o lu m n address access tim e - 14 / 1 6 ns CAS access tim e

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V C256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

Contextual Info: January 2001 Advance Information AS4VC256K16EO 2.5V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh