AS4LC256K16E0 Search Results

Contextual Info: $6/&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (AS4LC256K16E0-35)

Contextual Info: AS4LC256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e

Contextual Info: Preliminary information •■ AS4LC256K16E0 II 3.3V 256KX16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns RAS access tim e - 1 7 / 2 0 /2 5 ns c o lu m n address access tim e - 7 / 1 0 / 1 0 ns CAS access tim e

Contextual Info: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e

AS4LC256K16EO

Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
Contextual Info: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time

AS4LC256K16EO

Contextual Info: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh - 45/50/60 ns RAS access time

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Contextual Info: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16

sem 2105 16 pin

Abstract: sem 2105 AS4LC256K16E0
Contextual Info: I’relim inan in ['orinal ion •■ AS4LC256K16K0 II 3.3V 2 5 6 K x l6 CMOS DRAM EDO c a tu r e s O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits H ig h speed - 3 5 / 4 5 / 6 0 ns RAS access tim e - 1 7 /2 0 / 2 5 ns c o lu m n address access tim e - 7 / 1 0 / 1 0 ns CAS access tim e

6k16e

Abstract: TEA II04 256KX16 AS4LC256K16E0 AS4LC256K16E0-35JC
Contextual Info: Preliminary information •■ A S4LC256K16E0 1 3.3V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l - R A S -only o r C A S-before-RA S re fre s h o r se lf re fre s h • R e a d -m o d ify -w rite

Contextual Info: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time