AS11D
Abstract: AS63B
Text: STEP RECOVERY DIODES SRD'S TYPE (1) NUMBER AS11A AS11B AS11C AS11D AS12A AS12B AS12C AS12D AS21A AS21B AS21C AS21D AS22A AS22B AS22C AS22D AS31A AS31B AS31C AS31D AS32A AS32B AS32C AS32D AS41A AS41B AS41C AS41D AS42A AS42B AS42C AS42D AS43A AS43B AS43C AS43D
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AS11A
AS11B
AS11C
AS11D
AS12A
AS12B
AS12C
AS12D
AS21A
AS21B
AS11D
AS63B
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AIL 4M
Abstract: JI-30009-A
Text: Advance information Features ' A uto re fre s h a n d se lf re fre s h • O rg a n iz a tio n - 4 ,1 9 4 ,3 0 4 w ords X 4 bits x 4 banks 16M X4 - 2 ,0 9 7 ,1 5 2 w ords x 8 bits x 4 banks (8M x8) - 1,048,576 w ords x 16 bits x 4 banks (4M X16) • F ully s y n c h ro n o u s
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54-pin
AS4LC16M4S0-8TC
AS4LC4M16S0-8TC
AS41C16M4SQ-10TC
AS4LC8M8S0-10TC
AS4LC4M16S0-10TC
1-30009-A.
AS4LC16M4S0
AIL 4M
JI-30009-A
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smd marking ACH
Abstract: DS00002 CP11A
Text: DRAM 4 MEG x 4 DRAM 3.3V, EDO PAGE MODE AVAILABLE IN MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 • SMD Planned 24/28-Pin FEATURES • In d u stry -sta n d ard x4 pinout, tim ing, functions and packages • H igh-perform ance CM OS silicon-gate process
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MIL-STD-883
24/28-Pin
150mW
048-cycle
MIL-STD-883
smd marking ACH
DS00002
CP11A
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SRAM 64KX8 5V
Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164
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AS7C164
AS7C256
AS7C512
AS7C513
AS7C3513
AS7C1024
AS7C31024
AS7C1026
AS7C31026
AS7C1025
SRAM 64KX8 5V
128U K
SRAM 512*8
SRAM
3.3v 1Mx8 SRAM
edo dRAM
AS7C40
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Untitled
Abstract: No abstract text available
Text: A S4L C 16M 4S0 A S4L C 8M 8S0 A S4L C 4M 16S0 H ig h p e r f o r m a n c e 16 M x 4 / 8 M X 8 /4 M X 16 CMOS DRAM A 6 4 M egabit CMOS synchronous DRAM Advance information Features • O rg a n iz a tio n - 4 ,1 9 4 ,3 0 4 w ords X 4 bits X 4 banks 16MX4
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16MX4)
ati4S0-10TC
54-pin
AS4LC8M8S0-10TC
AS4LC4M16S0-8TC
AS4LC4M16S0-10TC
1-30009-A.
AS4LC16M
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