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APT60M75JVR Price and Stock

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Microchip Technology Inc APT60M75JVR MOSFET N-CH 600V 62A ISOTOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT60M75JVR	Tube			10	1 - 10 $82.351 100 $82.351 1000 $82.351 10000 $82.351	Buy Now
Avnet Americas	APT60M75JVR	Tube		26 Weeks	10	1 $80.703 10 $80.703 100 $67.08 1000 $67.1226 10000 $67.1226	Buy Now
Mouser Electronics	APT60M75JVR					1 - 10 $82.35 100 $82.35 1000 $82.35 10000 $82.35	Get Quote
Newark	APT60M75JVR	Bulk			10	1 $82.35 10 $82.35 100 $71.14 1000 $66.84 10000 $66.84	Buy Now
Future Electronics	APT60M75JVR				10	1 - 10 $71.32 100 $71.32 1000 $71.32 10000 $71.32	Buy Now

Microchip Technology Inc	APT60M75JVR	Tube		26 Weeks		1 $82.35 10 $82.35 100 $71.14 1000 $65.25 10000 $63.1	Buy Now
Onlinecomponents.com	APT60M75JVR					1 - 10 $68.8 100 $68.8 1000 $68.8 10000 $68.8	Buy Now
TME	APT60M75JVR				1	1 $118.51 10 $94.69 100 $94.69 1000 $94.69 10000 $94.69	Get Quote
NAC	APT60M75JVR	Tube			4	1 $76.41 10 $76.41 100 $70.38 1000 $65.23 10000 $65.23	Buy Now
Richardson RFPD	APT60M75JVR				10	1 - 10 $73.46 100 $70.64 1000 $70.64 10000 $70.64	Buy Now
Master Electronics	APT60M75JVR					1 - 10 $68.8 100 $68.8 1000 $68.8 10000 $68.8	Buy Now

APT60M75JVR Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT60M75JVR		Microsemi	Power MOS V MOSFET		Original	PDF

APT60M75JVR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DIODE 248 Abstract: No abstract text available Text: APT60M75JVR 62A 0.075Ω 600V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT60M75JVR OT-227 E145592 DIODE 248
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original	PDF
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original	PDF
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original	PDF
h48 diode SPECIFICATIONS Abstract: DIODE 248 Text: • R ADVANCED r M po w er Tec h n o lo g y APT60M75JVR 6oov 62a 0.075Q POWER MOS V P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®	OCR Scan	PDF	APT60M75JVR OT-227 APT60M75JVR Con04) E145592 h48 diode SPECIFICATIONS DIODE 248
Untitled Abstract: No abstract text available Text: APT60M75JVR A dvanced P o w er Te c h n o l o g y 600V 62A 0.075Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT60M75JVR OT-227
Untitled Abstract: No abstract text available Text: A dvanced P o w er Te c h n o l o g y APT60M75JVR 600V ' 62A 0.075Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT60M75JVR OT-227 APT60M75JVR MIL-STD-750 OT-227
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	PDF	APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
mj 1504 Abstract: APT60M75JVR Text: w ^ p s s s ^ ^ ^ y t - ìA p T 6 o M Z à M Te c h n o l o g y ' P O W E R M 7 5 j v R 62a 6oov 0.0750 O S V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT60M75JVR OT-227 Conti-227 mj 1504 APT60M75JVR