APT54GA60S Search Results

APT54GA60S Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT54GA60S		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54;		Original	PDF
APT54GA60SD30		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54;		Original	PDF

APT54GA60S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT54GA60B Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30 Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise	Original	APT54GA60BD30 APT54GA60SD30 APT54GA60B APT54GA60BD30 APT54GA60SD30 MIC4452 SD30	PDF
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise	Original	APT54GA60BD30 APT54GA60SD30 APT54GA60SD30	PDF
igbt 16A Contextual Info: APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT54GA60B APT54GA60S APT54GA60S igbt 16A	PDF
APT54GA60B Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30 Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise	Original	APT54GA60BD30 APT54GA60SD30 APT54GA60B APT54GA60BD30 APT54GA60SD30 MIC4452 SD30	PDF
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise	Original	APT54GA60BD30 APT54GA60SD30	PDF
APT54GA60B Abstract: APT54GA60S MIC4452 Contextual Info: APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT54GA60B APT54GA60S with112) APT54GA60B APT54GA60S MIC4452	PDF
Contextual Info: APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT54GA60B APT54GA60S switch/97	PDF
Contextual Info: APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT54GA60B APT54GA60S APT54GA60S	PDF