APT50M Search Results

APT50M75JLLU3

Abstract: mosfet 600V 30A
Contextual Info: APT50M75JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Features • Power MOS 7® MOSFETs - Low RDSon

APT50M80B2VFR

Abstract: ED 58A
Contextual Info: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

apt50m85jvr

Contextual Info: APT50M85JVR 50A 0.085Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

diode 356

Contextual Info: APT50M50L2LL 500V 89A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

fast diode SOT-227

Contextual Info: APT50M38JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

APT50M75JLLU2

Abstract: SOT-227 heatsink
Contextual Info: APT50M75JLLU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

ed 77A DIODE

Abstract: 77A DIODE APT50M60L2VR DIODE ED 92
Contextual Info: APT50M60L2VR 500V 77A 0.060W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

apt50m75

Contextual Info: APT50M75JLLU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation · Direct mounting to heatsink isolated package · Low junction to case thermal resistance · Very rugged · Low profile D G

Contextual Info: • R APT50M85JVFR A dvanced W /Æ P o w er Te c h n o lo g y soov POWER MOS V soa o .o s s q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M75B2FLL

Abstract: APT50M75LFLL
Contextual Info: APT50M75B2FLL APT50M75LFLL 500V 57A 0.075Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M75B2LL

Abstract: APT50M75LLL ic power mosfet 100V 57A
Contextual Info: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT50M60JVFR 0.060Ω 500V 63A POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M80JLC

Contextual Info: APT50M80JLC 52A 0.080 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

AN 780a

Abstract: APT45M60BFN APT50M60BFN y381 MC 78 M 05 CG 45M60
Contextual Info: ADVANCED POWER TECHNOLOGY W1 MTE ' D ^ • DESTTCH 4bb ■ AVP : A dvanced W jM ROWER T -3 A -IS 'co ^ ta 000D5Bb ZéÊk T e c h n o l o g y _ APT50M60BFN 500V 78.0A 0.060 W APT45M60BFN 450V 78.0A 0.060 Î Ï POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT50M80JLC

Abstract: 52AJ C25-C34
Contextual Info: APT50M80JLC 52A 0.080 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

Contextual Info: APT50M85JVR 50A 0.085Ω Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M75JLLU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 75m max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch

Contextual Info: APT50M75JLL 51A 0.075W 500V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: A dvanced P ow er Te c h n o l o g y APT50M50JVFR 500V ' POWER MOSV 77A 0.050Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT50M60JN 500V 71A 0.060Q yiiX"UL Recognized" File No. E145592 S clHïlBHïïJïP ISOTOP* POWER MOS IV( AGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage

APT50M80B2VFR

Abstract: APT50M80LVFR
Contextual Info: APT50M80B2VFR APT50M80LVFR 500V 58A 0.080Ω POWER MOS V FREDFET T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M50PVR W 500V 74.5A 0.050W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

APT50M80

Abstract: APT50M80B2LC APT50M80LLC
Contextual Info: APT50M80B2LC APT50M80LLC 500V 58A 0.080W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

APT50MC120JCU2

Contextual Info: APT50MC120JCU2 ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D VDSS = 1200V RDSon = 40mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch