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    APT30GT60CR Search Results

    APT30GT60CR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30GT60CR
    		Advanced Power Technology Thunderbolt IGBT Original PDF

    APT30GT60CR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    lm 1035

    Contextual Info: APT30GT60CR 600V 30A Thunderbolt IGBT™ TO-254 TO-254 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		APT30GT60CR O-254 150KHz 66VCES MIL-STD-750 lm 1035 PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR PDF

    600V1200V

    Contextual Info: PRODUCTS - IGBTs IGBT Technology . Non-Punch-Through IGBTs are manufactured by fabricating the MOSFET structure on the surface of a lightly doped, n-substrate. APT’s construction provides the optimal tradeoff between VCE SAT , switching speed, and ruggedness.


    Original     		40kHZ 150kHZ 300kHZ 00V-1200V, 0A-50A O-254, O-258, APT20GT60AR APT30GT60AR APT50GF60AR 600V1200V PDF