APT28GA60SD15 Search Results
APT28GA60SD15 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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| APT28GA60SD15 |
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Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 28; | Original |
APT28GA60SD15 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
APT28GA60BD15 APT28GA60SD15 APP11 | |
diode bridge 16AContextual Info: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
APT28GA60BD15 APT28GA60SD15 diode bridge 16A | |
DIODE RECTIFIER BRIDGE SINGLE 200A
Abstract: APT28GA60BD15 APT28GA60SD15 MIC4452 SD15
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Original |
APT28GA60BD15 APT28GA60SD15 APPLICAT67 DIODE RECTIFIER BRIDGE SINGLE 200A APT28GA60BD15 APT28GA60SD15 MIC4452 SD15 |