APT18M80S Search Results

APT18M80S Price and Stock

Filter by Manufacturer


Microchip Technology Inc APT18M80S MOSFET N-CH 800V 19A D3PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT18M80S	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

APT18M80S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT18M80S		Microsemi	N-Channel MOSFET		Original	PDF

APT18M80S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT18M80B Abstract: APT18M80S MIC4452 Contextual Info: APT18M80B APT18M80S 800V, 18A, 0.56Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	APT18M80B APT18M80S APT18M80B APT18M80S MIC4452	PDF
Contextual Info: APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	APT18M80B APT18M80S	PDF
Contextual Info: APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	APT18M80B APT18M80S	PDF
APT18M80B Abstract: APT18M80S MIC4452 Contextual Info: APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	APT18M80B APT18M80S APT18M80B APT18M80S MIC4452	PDF