AP30G120W Search Results
AP30G120W Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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AP30G120W | Advanced Power Electronics | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Original |
AP30G120W Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features 1100V VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 30A IC C G RoHS Compliant C |
Original |
AP30G120W Fig11. | |
v120t
Abstract: AP30G120W
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Original |
AP30G120W Fig11. v120t AP30G120W | |
ap30g120wContextual Info: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1100V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G ▼ RoHS Compliant |
Original |
AP30G120W Fig11. ap30g120w | |
Contextual Info: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E |
Original |
AP30G120W-HF-3 100oC AP30G120 30G120W |