AP30G120ASW Search Results
AP30G120ASW Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| AP30G120ASW | Advanced Power Electronics | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD | Original |
AP30G120ASW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage V CE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant IC 1200V 30A C C |
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AP30G120ASW Fig11. | |
30G120ASWContextual Info: Advanced Power Electronics Corp. AP30G120ASW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 2.9V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package |
Original |
AP30G120ASW-HF-3 AP30G120AS 30G120ASW 30G120ASW | |
AP30G120ASW
Abstract: AP30G120 VCE-12 500V N-Channel IGBT TO-3P
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AP30G120ASW Fig11. AP30G120ASW AP30G120 VCE-12 500V N-Channel IGBT TO-3P |