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    Talema Group LLC AP-1000

    CURR SENSE XFMR 10A T/H
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    DigiKey AP-1000 Tray 2,873 1
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    • 1000 $1.77429
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    TME AP-1000 4,007 1
    • 1 $2.5
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    onsemi NCP1075BAP100G

    IC OFFLINE SWITCH FLYBACK 8DIP
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    DigiKey NCP1075BAP100G Tube 1,000 1
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    NCP1075BAP100G Tube 40 1
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    Mouser Electronics NCP1075BAP100G 288
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    Avnet Asia NCP1075BAP100G 15 Weeks 1,000
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    onsemi NCP1077BAP100G

    IC OFFLINE SWITCH FLYBACK 8DIP
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    DigiKey NCP1077BAP100G Tube 250 1
    • 1 $3.14
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    NCP1077BAP100G Tube 38 1
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    Flip Electronics NCP1077BAP100G 23,200
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    onsemi NCP1079AAP100G

    IC OFFLINE SWITCH FLYBACK 7DIP
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    DigiKey NCP1079AAP100G Tube 200 1
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    NCP1079AAP100G Tube 45 1
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    Mouser Electronics NCP1079AAP100G 200
    • 1 $3.46
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    Rochester Electronics NCP1079AAP100G 16,170 1
    • 1 $1.28
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    TME NCP1079AAP100G 1
    • 1 $2.39
    • 10 $1.89
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    Avnet Silica NCP1079AAP100G 16 Weeks 50
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    EBV Elektronik NCP1079AAP100G 16 Weeks 50
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    onsemi NCP1077AAP100G

    IC OFFLINE SWITCH FLYBACK 7DIP
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    DigiKey NCP1077AAP100G Tube 146 1
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    Mouser Electronics NCP1077AAP100G 903
    • 1 $2.06
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    • 1000 $0.955
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    Rochester Electronics NCP1077AAP100G 9,800 1
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    Avnet Silica NCP1077AAP100G 19 Weeks 50
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    EBV Elektronik NCP1077AAP100G 20 Weeks 50
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    AP100 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AP-100 American Hakko Products Test and Measurement - Equipment - Specialty - TORQUE TESTER, MEASUREMENT RANGE Original PDF
    AP10.0 APD Semiconductor ZENER DIODES DO-35 Case Scan PDF
    AP10.0 APD Semiconductor 500 mW Zener Diodes in a DO-35 Case Scan PDF
    AP-1000 Talema Electronic Current Sense Transformers, Transformers, XFMR 50/60HZ PCB CL 0.2 1000:1 Original PDF
    AP1000 API Electronics Short form transistor data Short Form PDF
    AP1000 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    AP1000A Advanced Semiconductor Diode Original PDF
    AP1000A-001 Advanced Semiconductor Diode Original PDF
    AP1000B Advanced Semiconductor DIODE PIN SWITCH 100V 2CASE STYLE Scan PDF
    AP1000B-00 Advanced Semiconductor Diode Original PDF
    AP1000C Advanced Semiconductor DIODE PIN SWITCH 100V 2CASE STYLE Scan PDF
    AP1000C-11 Advanced Semiconductor Diode Original PDF
    AP1000D Advanced Semiconductor DIODE PIN SWITCH 100V 2CASE STYLE Scan PDF
    AP1001 API Electronics Short form transistor data Short Form PDF
    AP1001 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    AP1002 API Electronics Short form transistor data Short Form PDF
    AP1002 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    AP1003 API Electronics Short form transistor data Short Form PDF
    AP1003 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    AP1004 API Electronics Short form transistor data Short Form PDF

    AP100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 3.8mΩ ID G 19A S Description The AP1005BSQ used the latest APEC Power MOSFET silicon


    Original
    PDF AP1005BSQ AP1005BSQ 100us 100ms Fig10.

    Untitled

    Abstract: No abstract text available
    Text: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 6mΩ ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon


    Original
    PDF AP1001BSQ AP1001BSQ 100us 100ms Fig10.

    AP1000A

    Abstract: 10M-ATS
    Text: AP1000A SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The AP1000A is a Diffused Epitaxial Silicon PIN Diode. MAXIMUM RATINGS IC 100mA VCE 100 V PDISS 500 mW @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC 50 C/W TSOLD 5.0 Sec./200 C O O O O O O


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    PDF AP1000A AP1000A 100mA 10M-ATS

    AP1000C-11

    Abstract: No abstract text available
    Text: AP1000C-11 SILICON PIN DIODE DESCRIPTION: The AP1000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device Iis Designed to Cover a Wide Range of Control Applications Such as RF Switching, Phase Shifting,


    Original
    PDF AP1000C-11 AP1000C-11

    AP1003

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP1003BMP-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D BV DSS Low Conductance Losses 30V RDS(ON) Fast Switching Performance G Low Profile (< 0.7mm ) 4.5mΩ ID S 18.4A Description The AP1003BMP-3 uses the latest APEC Power MOSFET silicon


    Original
    PDF AP1003BMP-3 AP1003BMP-3 AP1003B AP1003

    Untitled

    Abstract: No abstract text available
    Text: AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 3.8m ID G Compatible with DirectFET Package SQ Footprint and Outline


    Original
    PDF AP1005BSQ AP1005BSQ 100us 100ms Fig10.

    AP1002BMX

    Abstract: No abstract text available
    Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon


    Original
    PDF AP1002BMX AP1002BMX 100us 100ms Fig10.

    ap1001

    Abstract: AP1001BSQ 6M15A
    Text: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 6mΩ ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon


    Original
    PDF AP1001BSQ AP1001BSQ 100us 100ms Fig10. ap1001 6M15A

    ap1002

    Abstract: No abstract text available
    Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon


    Original
    PDF AP1002BMX AP1002BMX 100us 100ms Fig10. ap1002

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free D BV DSS Low Conductance Losses 30V RDS ON Fast Switching Performance G Low Profile (< 0.7mm ) 1.8mΩ ID S 32A Description The AP1002BMX-3 uses the latest APEC Power MOSFET silicon


    Original
    PDF AP1002BMX-3 AP1002BMX-3 AP1002B

    Untitled

    Abstract: No abstract text available
    Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 1.8m ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon


    Original
    PDF AP1002BMX AP1002BMX Fig10.

    Untitled

    Abstract: No abstract text available
    Text: AP1003BST Preliminary Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 4.7m ID G 17.3A S Description The AP1003BST used the latest APEC Power MOSFET silicon


    Original
    PDF AP1003BST AP1003BST 25ion 100us 100ms Fig10.

    Untitled

    Abstract: No abstract text available
    Text: AP1004CMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ultra-low Forward Diode BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 1.8m ID G Compatible with DirectFET Package MX Footprint and Outline


    Original
    PDF AP1004CMX AP1004CMX 100us 100ms Fig10.

    AP1000B-00

    Abstract: No abstract text available
    Text: AP1000B-00 SILICON PIN DIODE CHIP DESCRIPTION: The AP1000B-00 is a Planar Silicon PIN Diode Chip Designed for High Speed Switch and Limiter Applications Up to 18 GHz. FEATURES INCLUDE: • Low Capacitance - 0.10 pF Typical • Fast Switching - 10 nS Typical


    Original
    PDF AP1000B-00 AP1000B-00 CHP152

    AP1002

    Abstract: No abstract text available
    Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon


    Original
    PDF AP1002BMX AP1002BMX 100us 100ms Fig10. AP1002

    Untitled

    Abstract: No abstract text available
    Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon


    Original
    PDF AP1002BMX AP1002BMX 100us 100ms Fig10.

    ABB AX400

    Abstract: AP103 ph sensor water pH measurement sensor c763 transistor c763 datasheet AP100 series water flow sensor water ph sensor liquid electrolyte sensor
    Text: Data Sheet SS/AP100 Issue 9 pH/Redox ORP Cartridge Sensors with Water-Wash Option AP100 Series Compact 'all-in-one' cartridge design – simplifies sensor replacement, minimizing downtime Detachable cable option – ensures rapid and easy installation and


    Original
    PDF SS/AP100 AP100 the0/602 AP104/120 AP104/125 AP104/130 ABB AX400 AP103 ph sensor water pH measurement sensor c763 transistor c763 datasheet AP100 series water flow sensor water ph sensor liquid electrolyte sensor

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP1001BSQ-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) G S BV DSS 25V RDS(ON) 6mΩ ID 15A Description The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon


    Original
    PDF AP1001BSQ-3 AP1001BSQ-3 AP1001BSQ-3TR

    Untitled

    Abstract: No abstract text available
    Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm ▼ Compatible with DirectFET Package MX Footprint and Outline BVDSS 30V


    Original
    PDF AP1002BMX AP1002BMX 100us 100ms Fig10.

    AP1004CMX

    Abstract: No abstract text available
    Text: AP1004CMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Ultra-low Forward Diode D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 1.8mΩ ID G 32A S Description The AP1004CMX used the latest APEC Power MOSFET silicon


    Original
    PDF AP1004CMX AP1004CMX 100us 100ms Fig10.

    AP1003

    Abstract: miller
    Text: AP1003BST Preliminary Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 4.7mΩ ID G 17.3A S Description The AP1003BST used the latest APEC Power MOSFET silicon


    Original
    PDF AP1003BST AP1003BST 100us 100ms Fig10. AP1003 miller

    Untitled

    Abstract: No abstract text available
    Text: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 6m ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon


    Original
    PDF AP1001BSQ AP1001BSQ 100us 100ms Fig10.

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP1005BSQ-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D BV DSS Low Conductance Losses RDS(ON) Fast Switching Performance Low Profile (< 0.7mm ) G S ID 25V 3.8mΩ 19A Description The AP1005BSQ-3 uses the latest APEC Power MOSFET silicon


    Original
    PDF AP1005BSQ-3 AP1005BSQ-3 AP1005BSQ-3TR

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP1003BST-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D BV DSS Low Conductance Losses RDS(ON) Fast Switching Performance Low Profile (< 0.7mm ) G S ID 30V 4.5mΩ 17.3A Description The AP1003BST-3 uses the latest APEC Power MOSFET silicon


    Original
    PDF AP1003BST-3 AP1003BST-3 AP1003BST-3TR