darlington pair transistor
Abstract: Darlington pair AN3100 AN31001
Text: Freescale Semiconductor Application Note AN3100 Rev. 2, 7/2008 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single
|
Original
|
AN3100
darlington pair transistor
Darlington pair
AN3100
AN31001
|
PDF
|
darlington pair power transistor
Abstract: AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor
Text: Freescale Semiconductor Application Note AN3100 Rev. 0, 3/2005 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single
|
Original
|
AN3100
darlington pair power transistor
AN31001
current amplifier note darlington
AN3100
MMG3001NT1
MMG3002NT1
MMG3003NT1
freescale power RF products
darlington pair transistor
|
PDF
|
pcb layout design mobile DDR
Abstract: DDR2 pcb layout DDR2 sdram pcb layout guidelines ddr2 ram slot pin detail ddr2 ram SPEAr310 DDR1 pcb layout 1 gb ddr2 ram ddr pcb layout SPEAr3* AN2674
Text: AN3100 Application note Configuring the SPEAr3xx multi-port memory controller MPMC for external DDR SDRAM Introduction The SPEAr3xx embedded MPU family (SPEAr300, SPEAr310 and SPEAr320) features a multi-port memory controller for interfacing with external DDR or DDR2 memory devices.
|
Original
|
AN3100
SPEAr300,
SPEAr310
SPEAr320)
pcb layout design mobile DDR
DDR2 pcb layout
DDR2 sdram pcb layout guidelines
ddr2 ram slot pin detail
ddr2 ram
DDR1 pcb layout
1 gb ddr2 ram
ddr pcb layout
SPEAr3* AN2674
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3013NT1 Rev. 4, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3013NT1 Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad
|
Original
|
MMG3013NT1
MMG3013NT1
|
PDF
|
MMG3006N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 0, 1/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,
|
Original
|
MMG3006NT1
MMG3006NT1
MMG3006N
|
PDF
|
FR408
Abstract: 66417 AN1955 C0603C103J5RAC ECUV1H150JCV MMG3004NT1 AN377 275-232 5 vdc 4-0308 2825 qfn
Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 5, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high
|
Original
|
MMG3004NT1
MMG3004NT1
FR408
66417
AN1955
C0603C103J5RAC
ECUV1H150JCV
AN377
275-232 5 vdc
4-0308
2825 qfn
|
PDF
|
A113
Abstract: A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C MMG3001NT1
Text: Freescale Semiconductor Technical Data Document Number: MMG3001NT1 Rev. 6, 7/2007 Heterojunction Bipolar Transistor Technology InGaP HBT Broadband High Linearity Amplifier MMG3001NT1 The MMG3001NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,
|
Original
|
MMG3001NT1
MMG3001NT1
A113
A114
A115
AN1955
C0603C102J5RAC
C0603C103J5RAC
C101
ML200C
|
PDF
|
Amplifier SOT-89 c4
Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
|
Original
|
MMG3003NT1
MMG3003NT1
Amplifier SOT-89 c4
ML200C
Tower Mounted Amplifiers Schematic
sot-89 805
898-3
bipolar transistor ghz s-parameter
bk2125
Z2 J diode
TRANSISTOR Z4
SOT c5 87
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,
|
Original
|
MMG3006NT1
MMG3006NT1
|
PDF
|
C0603C105J5RAC
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3H21NT1 Rev. 1, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3H21NT1 Broadband High Linearity Amplifier The MMG3H21NT1 is a General Purpose Amplifier that is internally input
|
Original
|
MMG3H21NT1
MMG3H21NT1
C0603C105J5RAC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3010NT1 Rev. 5, 3/2008 Heterojunction Bipolar Transistor InGaP HBT Broadband High Linearity Amplifier MMG3010NT1 0 - 6000 MHz, 15 dB 17 dBm InGaP HBT Features • Frequency: 0 to 6000 MHz • P1dB: 17 dBm @ 900 MHz
|
Original
|
MMG3010NT1
MMG3010NT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3001NT1 Rev. 8, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT NOT RECOMMENDED FOR NEW DESIGN The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,
|
Original
|
MMG3001NT1
MMG3001NT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3009NT1 Rev. 6, 2/2012 Heterojunction Bipolar Transistor InGaP HBT Broadband High Linearity Amplifier MMG3009NT1 The MMG3009NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,
|
Original
|
MMG3009NT1
MMG3009NT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 8, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high
|
Original
|
MMG3004NT1
MMG3004NT1
|
PDF
|
|
GJM1555C1H180GB01
Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Text: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
|
Original
|
MML20242H
MML20242HT1
GJM1555C1H180GB01
GRM1555C1H180JA01
C11 inductor
RC0402FR-07-1K2RL
RO4350B
Rogers RO4350B microstrip
phemt .s2p
25c2625
|
PDF
|
Rogers RO4350B
Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Text: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
|
Original
|
MML09212H
MML09212HT1
Rogers RO4350B
RO4350B ROGERS
GRM155R71E103KA01
25C2625
GRM1555C1H181JZ01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3013NT1 Rev. 6, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3013NT1 Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad
|
Original
|
MMG3013NT1
MMG3013NT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and
|
Original
|
MMA25312B
MMA25312BT1
MMA25312B
|
PDF
|
24236
Abstract: 33369 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C
Text: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 4, 7/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad
|
Original
|
MMG3012NT1
MMG3012NT1
24236
33369
A113
A114
A115
AN1955
C0603C102J5RAC
C0603C103J5RAC
C101
ML200C
|
PDF
|
27125-120
Abstract: 28504 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C
Text: Freescale Semiconductor Technical Data Document Number: MMG3009NT1 Rev. 4, 7/2007 Heterojunction Bipolar Transistor InGaP HBT Broadband High Linearity Amplifier MMG3009NT1 The MMG3009NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,
|
Original
|
MMG3009NT1
MMG3009NT1
27125-120
28504
A113
A114
A115
AN1955
C0603C102J5RAC
C0603C103J5RAC
C101
ML200C
|
PDF
|
108-055
Abstract: IRL 8743 trANSISTOR 108-055 112247 A113 A114 mmg3013 AN1955 C0603C103J5RAC C101
Text: Freescale Semiconductor Technical Data Document Number: MMG3013NT1 Rev. 5, 7/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3013NT1 Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad
|
Original
|
MMG3013NT1
MMG3013NT1
108-055
IRL 8743
trANSISTOR 108-055
112247
A113
A114
mmg3013
AN1955
C0603C103J5RAC
C101
|
PDF
|
m3002n
Abstract: RF transistor marking IN SOT-89 M3002
Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,
|
Original
|
MMG3002NT1
OT--89
MMG3002NT1
m3002n
RF transistor marking IN SOT-89
M3002
|
PDF
|
MMG3001NT1
Abstract: 014728
Text: Freescale Semiconductor Technical Data Document Number: MMG3001NT1 Rev. 8, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT NOT RECOMMENDED FOR NEW DESIGN The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,
|
Original
|
MMG3001NT1
MMG3001NT1
014728
|
PDF
|
275-232
Abstract: 38494 FR408 66417 A113 A114 A115 AN1955 C0603C103J5RAC 250328
Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 3, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high
|
Original
|
MMG3004NT1
MMG3004NT1
275-232
38494
FR408
66417
A113
A114
A115
AN1955
C0603C103J5RAC
250328
|
PDF
|