AGRB10XM Search Results
AGRB10XM Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| AGRB10XM | Agere Systems | 10 W, 1.0GHz TO 2.7 GHz N-Channel E-Mode, Lateral MOSFET | Original |
AGRB10XM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AGRB10XM
Abstract: JESD22-C101A DSA00206784.txt
|
Original |
AGRB10XM AGRB10 DS04-140RFPP PB04-052RFPP) AGRB10XM JESD22-C101A DSA00206784.txt | |
|
Contextual Info: Product Brief February 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor |
Original |
AGRB10XM PB04-052RFPP PB04-009RFPP) | |
|
Contextual Info: Preliminary Data Sheet July 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation. |
Original |
AGRB10XM AGRB10 DS04-203RFPP DS04-140RFPP) | |
|
Contextual Info: Product Brief January 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor |
Original |
AGRB10XM PB04-009RFPP |