ACE636B Search Results
ACE636B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MOSFETContextual Info: ACE636B Common Drain Dual N-Channel Enhancement Mode Field Effect Description Advanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. High Power and Current handing capability. Fully Characterized Avalanche Voltage and Current. Small Surface |
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ACE636B MOSFET |