murata SAW
Abstract: No abstract text available
Text: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW FILTER FOR GSM850/GSM1900 (Rx) Murata part number : SAWEP881MCN2F00 (fc=881.5MHz)
|
Original
|
PDF
|
GSM850/GSM1900
SAWEP881MCN2F00
894MHz)
murata SAW
|
murata SAW
Abstract: C 2120 Y
Text: SAW FILTER FOR GSM850/GSM1900 Rx Murata part number : SAWEP881MCN2F00 (fc=881.5MHz) Package Dimensions Specification Item 2.0±0.1 Specification -30 to 85°C -10 to 80°C 25±2°C typ. (9) (8) (7) (6) 881.5 MHz (10) (5) 9 Y 1 1.6±0.1 Nominal Center Frequency(fc)
|
Original
|
PDF
|
GSM850/GSM1900
SAWEP881MCN2F00
894MHz)
1960MHz
murata SAW
C 2120 Y
|
murata SAW
Abstract: No abstract text available
Text: SAW FILTER FOR GSM850/GSM1900 Rx Murata part number : SAWEP881MCN2F00 (fc=881.5MHz) Package Dimensions Specification Item 2.0±0.1 Specification -30 to 85°C -10 to 80°C 25±2°C typ. (9) (8) (7) (6) 881.5 MHz (10) (5) 9 Y 1.6±0.1 Nominal Center Frequency(fc)
|
Original
|
PDF
|
GSM850/GSM1900
SAWEP881MCN2F00
894MHz)
murata SAW
|
PCN0513
Abstract: ALTERA PART MARKING stratix II EP2C15A EP2C20 EP2C35 EP2C50 EP2S15 EP2S60 EP2S90 9y marking
Text: Revision: 1.2.1 PROCESS CHANGE NOTIFICATION PCN0513 ADDITIONAL TSMC WAFER FABRICATION SITE Change Description: This is an update to PCN0513; please see the revision history table for information specific to this update. Beginning January 1, 2006, Altera started shipping 90-nm products from TSMC’s Fab 14 fabrication
|
Original
|
PDF
|
PCN0513
PCN0513;
90-nm
JESD46-B,
EP2S15,
EP2S30
EP2S180
PCN0513
ALTERA PART MARKING stratix II
EP2C15A
EP2C20
EP2C35
EP2C50
EP2S15
EP2S60
EP2S90
9y marking
|
FHT8550Y
Abstract: 9y marking fht8550g
Text: ࢅຫൈहࡍྯ Low Frequency Power Amplifier Transistors FHT8550 Low Frequency Power Amplifier Transistors ࢅຫൈहࡍྯ DESCRIPTION & FEATURES 概述及特點 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to FHT8050 與 FHT8050 互補
|
Original
|
PDF
|
FHT8050
OT-23
FHT8550
OT-23
hFE1FHT8550O
FHT85ymbol
-10mA
-100mA
-800mA
FHT8550Y
9y marking
fht8550g
|
MYS 99
Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Text: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes
|
Original
|
PDF
|
AN926
MYS 99
STMicroelectronics marking code date
MYS 99 STMicroelectronics
Date Code Marking STMicroelectronics
STMicroelectronics date code format
st marking code
st MYS 99
stmicroelectronics assembly site date code format
LOT code stmicroelectronics
marking code stmicroelectronics
|
MM1Z7V5B
Abstract: 9d bp MM1Z6V2 IR diodes 0B MM1Z3V9B 23265 MM1Z27B marking 0z sod
Text: MM1Z2V2B~MM1Z39B SILICON PLANAR ZENER DIODES Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • High reliability PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol
|
Original
|
PDF
|
MM1Z39B
OD-123
MM1Z33B
MM1Z36B
OD-123
MM1Z7V5B
9d bp
MM1Z6V2
IR diodes 0B
MM1Z3V9B
23265
MM1Z27B
marking 0z sod
|
FHT8550Y
Abstract: fht8550g FHT8550
Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon FHT8550 FEATURES 特点
|
Original
|
PDF
|
FHT8550)
FHT8050
FHT8550O
FHT8550Y
FHT8550G
-100A
-10mA
-100mA
FHT8550
|
marking code 0y
Abstract: 0z marking 9y marking diode sod-123 marking code 120 marking 0z MARKING CODE 0Z MM1Z11 MM1Z15B MM1Z16B MM1Z18B
Text: MM1Z2V2B~MM1Z39B SILICON PLANAR ZENER DIODES PINNING Features PIN • Total power dissipation: max. 500 mW • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design 2 1 • Tolerance approximately ± 2% Top View Simplified outline SOD-123 and symbol
|
Original
|
PDF
|
MM1Z39B
OD-123
OD-123
marking code 0y
0z marking
9y marking
diode sod-123 marking code 120
marking 0z
MARKING CODE 0Z
MM1Z11
MM1Z15B
MM1Z16B
MM1Z18B
|
FHR8550Y
Abstract: FHR8550 FHR8550G FHR8550O 9y marking 9G SOT-89
Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon FHR8550 FEATURES 特点
|
Original
|
PDF
|
FHR8550)
FHR8550O
FHR8550Y
FHR8550G
-120mA
-10mA
OT-89
FHR8550
9y marking
9G SOT-89
|
MM1Z10B
Abstract: MM1Z11B MM1Z12B MM1Z13B MM1Z15B MM1Z16B MM1Z39B
Text: TH97/2478 MM1Z2V7B - MM1Z39B TH09/2479 IATF 0060636 SGS TH07/1033 ZENER DIODES SOD-123 VZ : 2.7 to 39 V PD : 500 mW 1.65 1.55 0.6 0.5 2.7 2.6 1.15 1.05 * Total Power Dissipation 500 mW * Small Plastic Package suitable for surface mounted design * Tolerance approximately ± 2%
|
Original
|
PDF
|
TH97/2478
MM1Z39B
TH09/2479
TH07/1033
OD-123
MM1Z24B
MM1Z27B
MM1Z30B
MM1Z33B
MM1Z10B
MM1Z11B
MM1Z12B
MM1Z13B
MM1Z15B
MM1Z16B
MM1Z39B
|
MM1Z27B
Abstract: MM1Z2V2 MM1Z18B
Text: MM1Z2V0B-MM1Z39B Zener Diodes VZ : 2.0 to 39 V PD : 500 mW SOD-123 Features 2.7 2.6 1.15 1.05 Mechanical Data 0.135 0.127 1.65 1.55 0.6 0.5 Total Power Dissipation 500 mW Small Plastic Package suitable for surface mounted design Tolerance approximately ± 2%
|
Original
|
PDF
|
MM1Z2V0B-MM1Z39B
OD-123
MM1Z27B
MM1Z2V2
MM1Z18B
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DW52C2V4LED02-DW52C39LED02 ZENER DIODE FEATURES z z Ultra-Small Leadless Surface Mount Package Ideally Suited fou Automated Assembly Processes Maximum Ratings Ta=25℃ unless otherwise specified
|
Original
|
PDF
|
WBFBP-02C
DW52C2V4LED02-DW52C39LED02
DW52C18
LED02
DW52C20
DW52C22
DW52C24
|
diode 9D Bp
Abstract: smd 18B ZENER diode
Text: MM1Z2V0B~MM1Z39B SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features Total power dissipation: max.500 mW 1 Cathode 2 Anode Small plastic package suitable for surface mounted design
|
Original
|
PDF
|
MM1Z39B
OD-123
OD-123
diode 9D Bp
smd 18B ZENER diode
|
|
|
9y marking
Abstract: MM1Z10B MM1Z11B MM1Z12B MM1Z13B MM1Z15B MM1Z16B MM1Z18B MM1Z39B 9p marking
Text: Certificate TH97/10561QM MM1Z2V0B - MM1Z39B Certificate TW00/17276EM ZENER DIODES SOD-123 VZ : 2.0 to 39 V PD : 500 mW 1.65 1.55 0.6 0.5 2.7 2.6 1.15 1.05 * Total Power Dissipation 500 mW * Small Plastic Package suitable for surface mounted design * Tolerance approximately ± 2%
|
Original
|
PDF
|
TH97/10561QM
MM1Z39B
TW00/17276EM
OD-123
MM1Z24B
MM1Z27B
MM1Z30B
MM1Z33B
MM1Z36B
9y marking
MM1Z10B
MM1Z11B
MM1Z12B
MM1Z13B
MM1Z15B
MM1Z16B
MM1Z18B
MM1Z39B
9p marking
|
WBFBP-02C
Abstract: No abstract text available
Text: DW52CXXX Series 100 mW, WBFBP-02C Plastic-Encapsulate Zener Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES WBFBP-02C Ultra-Small Leadless Surface Mount Package Ideally Suited fou Automated Assembly Processes
|
Original
|
PDF
|
DW52CXXX
WBFBP-02C
DW52C36V
DW52C39V
27-Jul-2011
WBFBP-02C
|
BZT52-B22
Abstract: BZT52-B16 BZT52-B5V1 BZT52-B18 BZT52-B7V5 BZT52B2V4 BZT52B7V5 BZT52-B15 BZT52-B30
Text: BZT52B2V4 . BZT52B39 500 mW 2% BZT52B2V4 . BZT52B39 (500 mW 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-11-08 0 .1 2 Maximum power dissipation Maximale Verlustleistung ±0.2 3.8
|
Original
|
PDF
|
BZT52B2V4
BZT52B39
OD-123
BZT52-B22
BZT52-B16
BZT52-B5V1
BZT52-B18
BZT52-B7V5
BZT52B2V4
BZT52B7V5
BZT52-B15
BZT52-B30
|
bl marking
Abstract: TA4006F 9y marking
Text: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4006F U dì I : mm O T V TUNER VHF BF AMPLIFIER APPLICATIONS. + 0.2 O T V TÜNER UHF RF A M P L I F I E R A P P L I C A T I O N S . O F M TUNER RF A M P L I F I E R A P P L I C A T I O N S . 2.8-0.3 • O n accounI of this Device built in Bias Circuit,
|
OCR Scan
|
PDF
|
TA4006F
100MHz
1000M
bl marking
TA4006F
9y marking
|
BF963
Abstract: SIEMENS marking siemens MOSFET bf 434 BB515 D270K BF 963
Text: SIEMENS Silicon N Channel MOSFET Tetrode BF 963 • For high-gain, low-distortion VHF TV and FM mixer and input stages Type Marking Ordering Code BF 963 - Q62702-F904 Pin Configuration 1 2 4 3 S D G2 Package1 Gì X-plast Maximum Ratings Parameter Symbol Values
|
OCR Scan
|
PDF
|
Q62702-F904
fiS35bQ5
20mS30
6235b05
D270k
BB515
270kX
BF963
SIEMENS marking
siemens MOSFET
bf 434
BB515
BF 963
|
CMSH3-40
Abstract: CMPS5064 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE
Text: Marking Codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 02D CMPS5064 5G BC808.40 91E CMPZ4706 1A BC846A 6A BC817.16 91F CMPZ4707 1B BC846B 6B BC817.25 91G CMPZ4708 1E BC847A 6B CMPF5484 91H CMPZ4709 1F BC847B 6B1 CMPF5485 91J
|
OCR Scan
|
PDF
|
CMPS5064
BC846A
BC846B
BC847A
BC847B
CMPT5551
BC847C
BC848A
BC848B
BC848C
CMSH3-40
CMPD1001A
marking db6
BCW71 AG
marking 1FF
MARKING CODE 8Y
marking code k9
MARKING CODE 9k
6K MARKING CODE
|
Untitled
Abstract: No abstract text available
Text: r PART NUMBER 92503-X 02 SEE NOTE 6 1 4 .6 5 REF. ei i 2. g °? I Ö 3 < « £ a .31 £ PRESS-FIT HOLES HALE DIAMETER 0.65 AFTER PLATING DRILLED HOL£ 0.81 COPPER PLATING 0 .0 2 5 SnPb PLATING 0 .0 0 5 OPTIONAL ü 0.80 0.86 0.065 0.015 L -N tN N é -H n
|
OCR Scan
|
PDF
|
92503-X
94-VO
V41137
V00849
|
diode zener ZD 36
Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
Text: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .
|
OCR Scan
|
PDF
|
W-36W
20x20m
diode zener ZD 36
zener diode, zl 33
DIODE MARKING 9Y
zener diode zg 36
diode marking 4Y
diode zener ZL 30
diode zener ZD 15
diode zener ZL 15
zener diode BZ 22
zener diode, zl 22
|
Untitled
Abstract: No abstract text available
Text: r 1 I 2 PRODUCT NUMBER UNPLATED H OLES 84860—X001 'S -8 ; I . lû ^ ! i f ! I-« •11.95+g-^§ REF 1_ a - o to Li. ÜJ m Ö s: 00 O K CN CN ml QL RECOMMENDED HOLE PATTERN COMPONENT SIDE -H NOTES: ItM U l îf 8 ! =5 8. 4.00 — I — I r— 2.00 00 00
|
OCR Scan
|
PDF
|
84860--X001
94-VO
|
XP6543
Abstract: 25CT5A 9y transistor
Text: Composite Transistors Panasonic XP6543 Silicon NPN epitaxial planer transistor Unit: mm For low frequency amplification • Features • • High transition frequency fT. Two elements incorporated into one package. ■ Basic Part Number of Element • 2SC3904 x 2 elements
|
OCR Scan
|
PDF
|
XP6543
2SC3904
XP6543
25CT5A
9y transistor
|
