Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    9T16GH MOSFET Search Results

    9T16GH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    9T16GH MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    9T16GH

    Abstract: 9T16 9T16G 9T16GH mosfet AP9T16GH
    Text: AP9T16GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 25mΩ ID G 25A S Description Advanced Power MOSFETs from APEC provide the


    Original     		AP9T16GH/J O-252 O-251 O-251 9T16GJ 9T16GH 9T16 9T16G 9T16GH mosfet AP9T16GH PDF

    Untitled

    Abstract: No abstract text available
    Text: AP9T16GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D BVDSS 20V RDS ON Capable of 2.5V gate drive Single Drive Requirement 25m ID G 25A S Description Advanced Power MOSFETs from APEC provide the


    Original     		AP9T16GH/J O-252 O-251 O-251 9T16GJ PDF

    9T16GH

    Abstract: 9T16GH mosfet
    Text: Advanced Power Electronics Corp. AP9T16GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Supports Gate Drive as low as 2.5V D Fast Switching Characteristics 20V R DS ON Low Gate Charge G RoHS-compliant, Halogen-free BV DSS 25mΩ ID 25A S Description G Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		AP9T16GH/J-HF-3 O-252 AP9T16GH-HF-3 O-252 O-251 AP9T16GJ-HF-3) AP9T16 9T16GJ O-251 9T16GH 9T16GH mosfet PDF