9r1k2c
Abstract: IPW90R1K2C3 JESD22
Text: IPW90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW90R1K2C3
PG-TO247
009-134-A
O-247
PG-TO247-3
O-247,
9r1k2c
IPW90R1K2C3
JESD22
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9r1k2c
Abstract: IPW90R1K2C3 sevcon
Text: IPW90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 29 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW90R1K2C3
PG-TO247
9r1k2c
IPW90R1K2C3
sevcon
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9R1K2c
Abstract: DIODE D28
Text: IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 29 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP90R1K2C3
PG-TO220
9R1K2c
DIODE D28
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DIODE D28 08
Abstract: DIODE D28 04 d28-08 diode 9R1K2C
Text: IPA90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 29 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA90R1K2C3
PG-TO220
DIODE D28 08
DIODE D28 04
d28-08 diode
9R1K2C
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9R1K2C
Abstract: IPA90R1K2C3 DIODE D28 08 DIODE D28 JESD22
Text: IPA90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA90R1K2C3
PG-TO220
9R1K2C
IPA90R1K2C3
DIODE D28 08
DIODE D28
JESD22
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9R1K2c
Abstract: IPD90R1K2C3 DIODE D28 08 JESD22 DD-50 d28 diode DIODE D28
Text: IPD90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPD90R1K2C3
PG-TO252
9R1K2c
IPD90R1K2C3
DIODE D28 08
JESD22
DD-50
d28 diode
DIODE D28
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9r1k2c
Abstract: IPI90R1K2C3
Text: IPI90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max 1.2 Ω Q g,typ 29 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPI90R1K2C3
O-262
PG-TO262
9r1k2c
IPI90R1K2C3
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9R1K2C
Abstract: IPW90R1K2C3 JESD22 DIODE D28
Text: IPW90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW90R1K2C3
PG-TO247
9R1K2C
IPW90R1K2C3
JESD22
DIODE D28
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Untitled
Abstract: No abstract text available
Text: IPA90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA90R1K2C3
PG-TO220
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Untitled
Abstract: No abstract text available
Text: IPI90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPI90R1K2C3
PG-TO262
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9R1K2C
Abstract: 1amj DIODE D28 IPI90R1K2C3 JESD22
Text: IPI90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPI90R1K2C3
PG-TO262
9R1K2C
1amj
DIODE D28
IPI90R1K2C3
JESD22
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9R1K2C
Abstract: No abstract text available
Text: IPD90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPD90R1K2C3
PG-TO252
9R1K2C
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Untitled
Abstract: No abstract text available
Text: IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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IPP90R1K2C3
PG-TO220
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9R1K2c
Abstract: IPP90R1K2C3 DIODE D28 JESD22
Text: IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP90R1K2C3
PG-TO220
9R1K2c
IPP90R1K2C3
DIODE D28
JESD22
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