9GHZ TRANSISTOR Search Results

TRANSISTOR SMD MARKING CODE 16

Abstract: TRANSISTOR SMD catalog Marking Code SMD transistors MARKING SMD npn TRANSISTOR R SMD transistor code 132 "Philips Semiconductors" Catalog SMD MARKING CODE transistor smd marking CT1 transistor smd tv T R TRANSISTOR SMD MARKING CODE
Contextual Info: Philips Semiconductors: Product information on BFG540; BFG540, X; BFG540, XR, NPN 9GHz wideband transistor Select & Go. Go to Catalog & Start Information as of 2000-11-05 Catalog by Function Discrete semiconductors Audio Clocks and Watches Data communications

optical receiver -25dbm 10ghz

Abstract: photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716
Contextual Info: 19-1970; Rev 2; 1/02 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at 3.3V Supply ♦ 1.1µARMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAP-P Input Overload ♦ Received-Signal Strength Indication

transistor 9716

Abstract: photodiode 10Ghz PIN
Contextual Info: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

germanium photodiode PIN

Abstract: photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz
Contextual Info: 19-1970; Rev 0; 3/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

transistor 9716

Abstract: photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11
Contextual Info: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

asics

Abstract: AN646 APP646 OC48 asic chips
Contextual Info: Maxim > App Notes > ASICs Keywords: ASICs, QuickChip, RF, semicustom, custom, HF, asic, RF ASICs, quick chip, semi-custom, fullcustom Mar 13, 2000 APPLICATION NOTE 646 Semicustom QuickChip ASICs Implement RF Functions to 9GHz Abstract: Maxim has two different approaches for developing HF ASICs: a semi-custom QuickChip design

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

marking my

Abstract: 2SC3773 p5a TRANSISTOR MARKING
Contextual Info: Ordering n u m b e r:EN 1946B N0.1946B 71 2SC3773 N P N Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amp, Wide-Band Amp Applications i Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band amplifiers.

pll 9ghz vco

Abstract: PLL IC SCHEMATIC APP635 9ghz transistor RF TRANSISTOR 9GHZ
Contextual Info: Maxim > App Notes > ASICs SIGNAL GENERATION CIRCUITS WIRELESS, RF, AND CABLE Keywords: silicon bipolar, PLL, integrated circuit, IC, Maxim, GST-2, QuickChip, ASIC, broadband pll Mar 27, 2001 APPLICATION NOTE 635 QuickChip Design Example 1 - A Silicon Bipolar Broadband PLL

NEC 10F

Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Contextual Info: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.

sanyo tv tuner

Abstract: 2sa1778 JT MARKING 2SA1669 2SC3770 2SC4401 2SC4402 2SC4403 2SC4405 2SC4406
Contextual Info: SA/Im VERY HIGH-FREQUENCY TRANSISTOR SERIES Ifcl Use * * * * Wide-band amplifiers UHF.VHF TV tuners CATV converters RF modulators ( )=Marking on MCP. CP, PCP. For PNP, (-)sign is omitted. P C : ( P a c k a g e :PCP) Mounted on PCB ( 2 50mm!X0. 8mm) Features *

Contextual Info: Ordering number: EN 1949B i S A \Y O No.l949B _ 2SC3776 NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amp, _ Wide-Band Amp Applications i Applications . UHF frequency converters, band amplifiers local oscillators,

Contextual Info: Ordering number: EN 1954C SA WO _ 2SC3779 No.l954C NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NFrl.5dB typ f=0.9GHz .

rf transistor 6ghz 1w

Abstract: TC2571 TC1501
Contextual Info: TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation

gl 7445

Abstract: 15564 TC2676
Contextual Info: TC2676 REV4_20070906 2 W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT l 2 W Typical Output Power at 6 GHz l 9 dB Typical Linear Power Gain at 6 GHz l High Linearity: IP3 = 43 dBm Typical at 6 GHz l High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz

ECG009

Abstract: C100 MCH185A560JK E4432B 60-000346-000B SS 1091
Contextual Info: PRELIMINARY DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

transistor kt 925

Abstract: 2SC4365 2SC4072
Contextual Info: SAflYO VERY HIGH-FREQUENCY TRANSISTOR SERIES ill Use * * * * * Features $ * # Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Dual TR for diff. amp High power gain Small noise figure High cutoff frequency ( ) ¡Marking on MCP, CP, PCP. For PNP, (-)sign is omitted.

2SC3774

Contextual Info: Ordering number: EN 1 94 78 2SC3774 NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers, wide-band amplifiers Features . Small noise figure: NF=2.2dB typ f=0.9GHz . . High power gain: MAG=l4dB typ(fs0.9GHz).

9-GHz

Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
Contextual Info: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

ROHM SOT89 MARKING

Abstract: ECG009B-1000 ECG009 311 SOT89
Contextual Info: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features „ Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

1951B

Abstract: 2SC3778
Contextual Info: Ordering num ber:EN 1 951B _ N 0. I 9 5 I B 2SC3778 NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifieres,wide-band amplifiers Features . Small noise figure: NFs2.2dB typ f=0.9GHz .

2sc377

Contextual Info: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.

2SC3779

Abstract: U40j 2SC3779 transistor
Contextual Info: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).

Contextual Info: Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation MSAG Process