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    9FB TRANSISTOR Search Results

    9FB TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    9FB TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 9fb

    Abstract: 9FC SOT23 marking code 9FB 9fc marking code marking 9fb 9fb transistor bc807 BC808 bc807 marking code transistor BC807
    Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage


    Original     		PDF BC807/BC808 BC817/BC818 OT-23 BC807 BC808 -100mA -300mA transistor 9fb 9FC SOT23 marking code 9FB 9fc marking code marking 9fb 9fb transistor bc807 BC808 bc807 marking code transistor BC807

    BC808

    Abstract: 9fb transistor bc807 BC817 BC818 026 pnp
    Text: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted


    Original     		PDF BC807/BC808 BC817 BC818 OT-23 BC807 BC808 -500mA, -50mA BC808 9fb transistor bc807 BC818 026 pnp

    smd 9FB

    Abstract: marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40
    Text: Transistors SMD Type PNP Silicon AF Transistors KC807 BC807 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1


    Original     		PDF KC807 BC807) OT-23 300mA KC807-16 KC807-25 KC807-40 smd 9FB marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40

    GSBC807

    Abstract: No abstract text available
    Text: ISSUED DATE :2005/06/08 REVISED DATE : GSBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The GSBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions REF. A A1 A2 D E HE


    Original     		PDF GSBC807 GSBC807

    UTC marking

    Abstract: No abstract text available
    Text: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted


    Original     		PDF BC807/BC808 BC817 BC818 OT-23 BC807 BC808 QW-R206-026 UTC marking

    HBC807

    Abstract: marking 9fb 9FC SOT23
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6830 HBC807 HBC807 OT-23 marking 9fb 9FC SOT23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 Lead-free: BC807L/BC808L Halogen-free:BC807G/BC808G


    Original     		PDF BC807/BC808 BC817 BC818 BC807L/BC808L BC807G/BC808G BC807-x-AE3-R BC808-x-AE3-R BC807-x-AL3-R BC808-x-AL3-R BC807L-x-AE3-R

    9FC SOT23

    Abstract: No abstract text available
    Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage


    Original     		PDF BC807/BC808 BC817/BC818 OT-23 BC807 BC808 BC808 9FC SOT23

    HBC807

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6830 HBC807 HBC807 OT-23 200oC 183oC 217oC 260oC 245oC

    BC807

    Abstract: marking code 9FB marking 9fb BC808 9FC SOT23
    Text: BC807/BC808 BC807/BC808 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC807/BC808 BC817/BC818 OT-23 BC807 BC808 BC807 marking code 9FB marking 9fb BC808 9FC SOT23

    9FC SOT23

    Abstract: BC807 BC808
    Text: BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC807/BC808 BC817/BC818 OT-23 BC807 BC808 9FC SOT23 BC807 BC808

    bf314

    Abstract: No abstract text available
    Text: BF 314 NPN SILICON Ik lJ. PLANAR UBI HIGH FREQUENCY EPITAXIAL J TRANSISTOR m n mj»4 * ? j i MECHANICAL OUTLINE GENERAL DESCRIPTION ; The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.


    OCR Scan     		PDF BF314 O-92F 100MHz BOX69477 J0321

    9FC SOT23

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Collector Emitter Voltage


    OCR Scan     		PDF BC807/BC808 OT-23 BC817/BC818 BC807 BC808 9FC SOT23

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: D 526 SILICON TRANSISTOR marking 9fb
    Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Characteristic Symbol Collector Emitter Voltage


    OCR Scan     		PDF BC807/BC808 BC817/BC818 OT-23 BC807 BC808 BC808 Transistor hFE CLASSIFICATION Marking CE D 526 SILICON TRANSISTOR marking 9fb

    Untitled

    Abstract: No abstract text available
    Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector Emitter Voltage: BC807


    OCR Scan     		PDF BC807/BC808 BC817/BC818 BC807 BC808 7Tb414S

    y-parameter

    Abstract: MPS-H81 MPSH81
    Text: MPS-H81 SILICON PNP SILICON E P IT A X IA L TRANSISTO R . designed fo r use in U H F /V H F oscillator applications. PNP SILICON TRANSISTOR C omplete y-Parameter Curves Low Collector-Em iitter Capacitance — Cce = 0.65 pF (Max) @ V CB = 10 Vdc High C urrent Gain — Bandwidth Product - @ I q = 6.0 mAdc


    OCR Scan     		PDF MPS-H81 y-parameter MPS-H81 MPSH81

    amplifier FA-30

    Abstract: KTC3194
    Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3194 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. . • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).


    OCR Scan     		PDF KTC3194 100MHz) amplifier FA-30 KTC3194

    marking code va transistors

    Abstract: BC807 BC808 sot-23 Marking sj
    Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • SUITABLE FO R A F D R IV E R S T A G E S AN D LOW PO W ER O U TPU T S TA G E S • Com plem en t to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra c te r is tic


    OCR Scan     		PDF BC807/BC808 BC817/BC818 BC807 BC808 OT-23 BC807 002S0bli marking code va transistors BC808 sot-23 Marking sj

    KTC3195

    Abstract: transistor ph 45
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3195 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. . • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).


    OCR Scan     		PDF KTC3195 100MHz) 100MHz KTC3195 transistor ph 45

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector Em itter Voltage


    OCR Scan     		PDF BC807/BC808 BC817/BC BC807 BC808 BC808 BC807

    Untitled

    Abstract: No abstract text available
    Text: MPSH81* CASE 29-04, STYLE 2 TO-92 TO-226AA MAXIMUM RATINGS ¡Symbol Value Unit Co llecto r-Em itter Voltage Rating VcEO -2 0 Vdc C o llecto r-Base Voltage VCBO -20 Vdc Em itter-Base Voltage v EBO - 3 .0 Vdc ,PD 350 2.81 mW m W *C T j- ^stg - 5 5 to +150


    OCR Scan     		PDF MPSH81* O-226AA)

    Untitled

    Abstract: No abstract text available
    Text: KSC2758 NPN EPITAXIAL SILICON TRANSISTOR RF. MIXER FOR UHF TUNER S O T-23 . HIGH POW ER GAIN Typ. 17dB . LOW N F T y p . 2.8dB ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage V cbO V cE O Rating


    OCR Scan     		PDF KSC2758 25product

    MPSH07A

    Abstract: No abstract text available
    Text: MPSH07A CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 30 Vdc Collector-Base Voltage v CBO 30 Vdc Em itter-Base Voltage v EBO 3.0 Vdc Pd 350 2.81 mW mW'°C TJ* f s tg - 55 to +150 °C Total Device D issipation


    OCR Scan     		PDF MPSH07A O-226AA) 100-MHz 200-M MPSH07A

    KTC3194

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3194 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. . • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).


    OCR Scan     		PDF KTC3194 100MHz) Ta-25Â KTC3194