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    MARKING KA

    Abstract: No abstract text available
    Text: CPH6401 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage 20 VDSS Gate to Source Voltage


    Original     		PDF CPH6401 900mm2 990915TM2fXHD MARKING KA

    rl 255 diode

    Abstract: k335 FET MARKING QG 2SK3352
    Text: 2SK3352 P- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features and Applications • Low ON-state resistance. • Very high - speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS


    Original     		PDF 2SK3352 990915TM2fXHD rl 255 diode k335 FET MARKING QG 2SK3352

    CPH3404

    Abstract: FET MARKING QG
    Text: CPH3404 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage 30 VDSS Gate to Source Voltage


    Original     		PDF CPH3404 900mm2 990915TM2fXHD CPH3404 FET MARKING QG