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    985 TRANSISTOR Search Results

    985 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    985 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BST04

    Abstract: P89lpc980 80C51 P89LPC985 TSSOP28
    Text: UM10346 P89LPC980/982/983/985 User manual Rev. 3 — 1 July 2010 User manual Document information Info Content Keywords P89LPC980/982/983/985 Abstract Technical information for the P89LPC980/982/983/985 device UM10346 NXP Semiconductors P89LPC980/982/983/985 User manual


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    UM10346 P89LPC980/982/983/985 P89LPC980/982/983/985 BST04 P89lpc980 80C51 P89LPC985 TSSOP28 PDF

    BYT 56M diode

    Abstract: IC4 7805 98c86 eeprom programmer schematic easy design universal eeprom programmer schematic AN-985 coil 2n2222a 98C86A 7805 12v to 5v HiSeC
    Text: AN-985 Fairchild Application Note 985 Designing and Programming a Complete HiSeC -based RKE System INTRODUCTION VCC This application note explains how to design, program and implement a complete high security RKE remote keyless entry system based on the Fairchild Semiconductor NM95HS01/02 HiSeC


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    AN-985 NM95HS01/02 MM57HS BYT 56M diode IC4 7805 98c86 eeprom programmer schematic easy design universal eeprom programmer schematic AN-985 coil 2n2222a 98C86A 7805 12v to 5v HiSeC PDF

    Untitled

    Abstract: No abstract text available
    Text: P89LPC980/982/983/985 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB wide-voltage byte-erasable flash with 10-bit ADC Rev. 03 — 18 May 2010 Product data sheet 1. General description The P89LPC980/982/983/985 is a single-chip microcontroller, available in low cost


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    P89LPC980/982/983/985 80C51 10-bit P89LPC980/982/983/985 64-byte P89LPC980 PDF

    P89lpc980

    Abstract: 80c51 manual 80C51 P89LPC985 TMM-10
    Text: P89LPC980/982/983/985 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB wide-voltage byte-erasable flash with 10-bit ADC Rev. 02 — 8 February 2010 Preliminary data sheet 1. General description The P89LPC980/982/983/985 is a single-chip microcontroller, available in low cost


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    P89LPC980/982/983/985 80C51 10-bit P89LPC980/982/983/985 64-byte P89LPC980 80c51 manual P89LPC985 TMM-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: P89LPC980/982/983/985 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB wide-voltage byte-erasable flash with 10-bit ADC Rev. 4 — 15 June 2010 Product data sheet 1. General description The P89LPC980/982/983/985 is a single-chip microcontroller, available in low cost


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    P89LPC980/982/983/985 80C51 10-bit P89LPC980/982/983/985 64-byte P89LPC980 PDF

    P89lpc980

    Abstract: 80C51 MANUAL P89LPC985 80C51 P89LPC980FD
    Text: P89LPC980/982/983/985 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB wide-voltage byte-erasable flash with 10-bit ADC Rev. 4 — 15 June 2010 Product data sheet 1. General description The P89LPC980/982/983/985 is a single-chip microcontroller, available in low cost


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    P89LPC980/982/983/985 80C51 10-bit P89LPC980/982/983/985 64-byte P89LPC980 80C51 MANUAL P89LPC985 P89LPC980FD PDF

    3 phase brushless dc control ir2130

    Abstract: Drive circuit for IGBT using IR2130 IR2130 APPLICATION NOTE 3 phase IGBT inverter design by ir2130 3 phase dc control ir2130 3 phase inverter ir2130 74175n IR2132 APPLICATION NOTE brushless motor driver ir2130 IR213x
    Text: Application Note AN-985 Six-Output 600V MGDs Simplify 3-Phase Motor Drives Table of Contents Page Gate Drive IR213x Block Diagram .2


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    AN-985 IR213x INT-985 IR2130/2132 HFA04TB60 IR2130 3 phase brushless dc control ir2130 Drive circuit for IGBT using IR2130 IR2130 APPLICATION NOTE 3 phase IGBT inverter design by ir2130 3 phase dc control ir2130 3 phase inverter ir2130 74175n IR2132 APPLICATION NOTE brushless motor driver ir2130 PDF

    HiSeC

    Abstract: How to Design and Program a HiSeC RKE Receiver us eeprom programmer schematic easy design universal COP8TM MM57HS 2n2222a nsc rolling code 2N2222A AN-985 national AN-985
    Text: National Semiconductor Application Note 985 Anne Gregory Charles Watts August 1995 INTRODUCTION This application note explains how to design program and implement a complete high security RKE remote keyless entry system based on the National Semiconductor


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    NM95HS01 MM57HS HiSeC How to Design and Program a HiSeC RKE Receiver us eeprom programmer schematic easy design universal COP8TM 2n2222a nsc rolling code 2N2222A AN-985 national AN-985 PDF

    eeprom programmer schematic easy design universal

    Abstract: HiSeC AN-985 NM95HS01 2n2222a fairchild super-regenerative receiver module AN012381-2 2N2907 COP888CG MM57HS
    Text: Fairchild Application Note 985 Anne Gregory Charles Watts March 1997 INTRODUCTION This application note explains how to design, program and implement a complete high security RKE remote keyless entry system based on the Fairchild Semiconductor NM95HS01/02 HiSeC Rolling Code Generator and the


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    NM95HS01/02 MM57HS assis80-530 an012381 eeprom programmer schematic easy design universal HiSeC AN-985 NM95HS01 2n2222a fairchild super-regenerative receiver module AN012381-2 2N2907 COP888CG PDF

    J133 mosfet transistor

    Abstract: transistor j239 J143 MOSFET J239 mosfet transistor J104 MOSFET J122 transistor mosfet j133 J133 MOSFET J133 transistor J239 TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


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    MRF9002R2 MRF9002R2 J133 mosfet transistor transistor j239 J143 MOSFET J239 mosfet transistor J104 MOSFET J122 transistor mosfet j133 J133 MOSFET J133 transistor J239 TRANSISTOR PDF

    transistor A113

    Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table PDF

    J133 mosfet transistor

    Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


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    MRF9002R2 MRF9002R2 J133 mosfet transistor mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15 PDF

    motorola MOSFET 935

    Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


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    MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor PDF

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


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    MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor PDF

    J133 mosfet transistor

    Abstract: transistor 955 MOTOROLA
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make


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    MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D J133 mosfet transistor transistor 955 MOTOROLA PDF

    power transistor unit j122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


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    MRF9002NR2 MRF9002NR2 power transistor unit j122 PDF

    J133 mosfet transistor

    Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL


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    MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935 PDF

    J133 mosfet transistor

    Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
    Text: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    MRF9002NT1 MRF9002R2 MRF9002R2 J133 mosfet transistor ON SEMICONDUCTOR J122 transistor a113 a113 transistor marking transistor RF PDF

    ON SEMICONDUCTOR J122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122 PDF

    J133 mosfet transistor

    Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133 PDF

    98c86

    Abstract: HiSeC XTAL 10mHZ TRANSISTOR BJ 032 OKI ignition TRANSISTOR BJ 033 putchar AN985 eeprom programmer schematic easy design universal 98C86A
    Text: AN-985 Designing and Programming a Complete HiSeC -based RKE System Application Note 985 s e m ic o n d u c t o r ™ INTRODUCTION This application note explains how to design, program and imple­ ment a complete high security RKE remote keyless entry system


    OCR Scan
    AN-985 NM95HS01/02 MM57HS NM95HSPROG. 98c86 HiSeC XTAL 10mHZ TRANSISTOR BJ 032 OKI ignition TRANSISTOR BJ 033 putchar AN985 eeprom programmer schematic easy design universal 98C86A PDF

    ksd 150 full safe

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE T O -126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcEO 150 V C ollector-E m itter Voltage : KSD 985


    OCR Scan
    KSD985/986 KSD986 ksd 150 full safe PDF

    F0D2741

    Abstract: QTC 4N25 QTC 4502 MOC 4N25 F0D2711 GENERAL SEMICONDUCTOR diodes marking code rq diodo detector HCPL-2501 E90700 qtc 6n139
    Text: 1655 Scott Blvd Santa Clara, CA 95050-4169 408 985-2400 FAX No. (408) 296-3256 Underwriters Laboratories Inc. File E90700 Issusd Revised Vol 11/17/1998 10/30/2001 FOLLOW-UP SERVICE PROCEDURE (TYPE R) COMPONENT Manufacturer : (621133-001) Applicant : (725625-001)


    OCR Scan
    E90700 FOD27X2Y HCPL-05XX HCPL-04XX HCPL-07XX HCPL-06XX FOD050L FOD053L HCPL-0530 HCPL-0531 F0D2741 QTC 4N25 QTC 4502 MOC 4N25 F0D2711 GENERAL SEMICONDUCTOR diodes marking code rq diodo detector HCPL-2501 E90700 qtc 6n139 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 B T MILLIMETER DIM A B C D E F G H 1 J MIN 24.52 9.91 MAX 25.01 10.41 6.35 1.91 2.42 2.80 3.9 4 7.36 2.28 2.92 3.30 4.4 4 INCHES MIN .965 MAX .985 .390 .250 .075 .095 .410 .290 .090 .115 .110 .155 .130 .175 .004 0.1 1 0.15 .090 2.29 2.9 4 .725 18.41 18.41


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    55JW3 PDF