mrf555
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
|
Original
|
MRF553
BFR91
BFR90
MRF545
MRF544
MRF553
mrf555
|
PDF
|
2N5179
Abstract: MRF553 1N4148 2N4427 2N6255 MRF4427 MRF559 MRF607 MRF5943C 2n5179 chip
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
|
Original
|
MRF553
MRF571
BFR91
BFR90
MRF545
MRF544
MSC1316
2N5179
MRF553
1N4148
2N4427
2N6255
MRF4427
MRF559
MRF607
MRF5943C
2n5179 chip
|
PDF
|
2n2857
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
|
Original
|
MRF553
2n2857
|
PDF
|
bead
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
|
Original
|
MRF553
bead
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics
|
Original
|
MRF553
MRF553G
|
PDF
|
MRF553G
Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics
|
Original
|
MRF553
MRF553G
MRF553G
1N4148 diode
2N5179
mrf544
1N4148
2N4427
2N5109
2N6255
MRF4427
MRF553
|
PDF
|
200 watt hf mosfet
Abstract: 100 watt hf mosfet 400 watt hf mosfet MS4300 1N5925A 80 watt hf mosfet
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4300 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:
|
Original
|
MS4300
MS4300
1N5925A
MSC0878
200 watt hf mosfet
100 watt hf mosfet
400 watt hf mosfet
80 watt hf mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz
|
OCR Scan
|
MS4300
MSC0878
|
PDF
|
200 watt hf mosfet
Abstract: No abstract text available
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz
|
OCR Scan
|
MS4300
MSC0878
200 watt hf mosfet
|
PDF
|
80 watt hf mosfet
Abstract: 3H DIODE spec 100 watt hf mosfet TRIMMER capacitor
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz
|
OCR Scan
|
MS4300
S4300
MSC0878
80 watt hf mosfet
3H DIODE spec
100 watt hf mosfet
TRIMMER capacitor
|
PDF
|
MS4550
Abstract: 200 watt hf mosfet 100 watt hf mosfet C8c3 1N5925A
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4550 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 175 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz CLASS A OR AB DESCRIPTION:
|
Original
|
MS4550
MS4550
1N5925A
MSC0895
200 watt hf mosfet
100 watt hf mosfet
C8c3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz
|
OCR Scan
|
MS4550
MS4550
MSC0895
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz
|
OCR Scan
|
MS4550
MSC0895
|
PDF
|
5 watt hf mosfet
Abstract: No abstract text available
Text: • m m RF Products M ic m m s e m i P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Featuies 2 -1 7 5 MHz 30 WATTS
|
OCR Scan
|
MS4550
MS4550
MSC0895
5 watt hf mosfet
|
PDF
|
|
|
9840 diode
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Module PSND 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSND 75E/02 PSND 75E/04 PSND 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt
|
Original
|
75E/02
75E/04
75E/06
15nce
9840 diode
|
PDF
|
9840 diode
Abstract: fred module
Text: Fast Recovery Epitaxial Diode FRED Module PSKD 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSKD 75E/02 PSKD 75E/04 PSKD 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt
|
Original
|
75E/02
75E/04
75E/06
15nce
9840 diode
fred module
|
PDF
|
TH 382
Abstract: fast diode SOT-227 APT50M50JFLL
Text: APT50M50JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
|
Original
|
APT50M50JFLL
OT-227
TH 382
fast diode SOT-227
APT50M50JFLL
|
PDF
|
SP6313US
Abstract: 1N4S35 9842 1N5988B
Text: Zener Regulator Diodes M/crasgn/ - Part Number Microsemi Division Mil Data Power W ' Spec Sheet ID Package Outline Typo B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-213AA DO-213AA DO-35 DO-7 DO-35 DO-7 DO-213AA DO-213AA
|
OCR Scan
|
DO-35
DO-213AA
SP6313US
1N4S35
9842
1N5988B
|
PDF
|
CH-8152
Abstract: 40EPS 40EPS08 40EPS12 40EPS16 60788 ScansUX33
Text: Bulletin 12104 International [IQRRectifier 40EPS. SERIES INPUT RECTIFIER DIODE I Description/Features T h e 4 0 E P S rectifie r series has been o p tim ize d fo r ve ry low fo rw a rd v o lta g e drop w ith m od e ra te leakage. T he glass passivation te ch no lo g y used
|
OCR Scan
|
40EPS
40EPS.
O-247AC
CH-8152
40EPS08
40EPS12
40EPS16
60788
ScansUX33
|
PDF
|
I2102
Abstract: 20ETS 20ETS08 20ETS12 20ETS16 SMD-220
Text: Previous Datasheet Index Next Data Sheet Bulletin I2102 20ETS. SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS. rectifier series has been optimized for very low forward voltage drop, with moderate
|
Original
|
I2102
20ETS.
CH-8152
I2102
20ETS
20ETS08
20ETS12
20ETS16
SMD-220
|
PDF
|
g10 smd transistor
Abstract: SMD marking DK ON smd MARKING dk S 1854 smd diode marking code ax 8150 marking g10 smd code diode 20a SMD MARKING CODE 39 20ETS08S
Text: 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used
|
Original
|
20ETS.
Alu-163
CH-8152
g10 smd transistor
SMD marking DK ON
smd MARKING dk
S 1854
smd diode marking code ax
8150
marking g10
smd code diode 20a
SMD MARKING CODE 39
20ETS08S
|
PDF
|
diode 348
Abstract: 9840 diode APT50M50L2LL 085mh
Text: APT50M50L2LL 500V 87A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses
|
Original
|
APT50M50L2LL
O-264
O-264
diode 348
9840 diode
APT50M50L2LL
085mh
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays
|
OCR Scan
|
|
PDF
|
smd diode 708
Abstract: 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220
Text: Previous Datasheet Index Next Data Sheet 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate
|
Original
|
20ETS.
CH-8152
smd diode 708
322 smd code
g10 smd transistor
smd code diode 20a
20ETS
20ETS08S
20ETS12S
20ETS16S
AN-994
SMD-220
|
PDF
|
