9840 DIODE Search Results

mrf555

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

2N5179

Abstract: MRF553 1N4148 2N4427 2N6255 MRF4427 MRF559 MRF607 MRF5943C 2n5179 chip
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

2n2857

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

bead

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics

MRF553G

Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics

200 watt hf mosfet

Abstract: 100 watt hf mosfet 400 watt hf mosfet MS4300 1N5925A 80 watt hf mosfet
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4300 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:

Contextual Info: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz

200 watt hf mosfet

Contextual Info: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz

80 watt hf mosfet

Abstract: 3H DIODE spec 100 watt hf mosfet TRIMMER capacitor
Contextual Info: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz

MS4550

Abstract: 200 watt hf mosfet 100 watt hf mosfet C8c3 1N5925A
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4550 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 175 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz CLASS A OR AB DESCRIPTION:

Contextual Info: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz

Contextual Info: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz

5 watt hf mosfet

Contextual Info: • m m RF Products M ic m m s e m i P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Featuies 2 -1 7 5 MHz 30 WATTS

9840 diode

Contextual Info: Fast Recovery Epitaxial Diode FRED Module PSND 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSND 75E/02 PSND 75E/04 PSND 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt

9840 diode

Abstract: fred module
Contextual Info: Fast Recovery Epitaxial Diode FRED Module PSKD 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSKD 75E/02 PSKD 75E/04 PSKD 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt

TH 382

Abstract: fast diode SOT-227 APT50M50JFLL
Contextual Info: APT50M50JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

SP6313US

Abstract: 1N4S35 9842 1N5988B
Contextual Info: Zener Regulator Diodes M/crasgn/ - Part Number Microsemi Division Mil Data Power W ' Spec Sheet ID Package Outline Typo B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-213AA DO-213AA DO-35 DO-7 DO-35 DO-7 DO-213AA DO-213AA

CH-8152

Abstract: 40EPS 40EPS08 40EPS12 40EPS16 60788 ScansUX33
Contextual Info: Bulletin 12104 International [IQRRectifier 40EPS. SERIES INPUT RECTIFIER DIODE I Description/Features T h e 4 0 E P S rectifie r series has been o p tim ize d fo r ve ry low fo rw a rd v o lta g e drop w ith m od e ra te leakage. T he glass passivation te ch no lo g y used

I2102

Abstract: 20ETS 20ETS08 20ETS12 20ETS16 SMD-220
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I2102 20ETS. SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS. rectifier series has been optimized for very low forward voltage drop, with moderate

g10 smd transistor

Abstract: SMD marking DK ON smd MARKING dk S 1854 smd diode marking code ax 8150 marking g10 smd code diode 20a SMD MARKING CODE 39 20ETS08S
Contextual Info: 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used

diode 348

Abstract: 9840 diode APT50M50L2LL 085mh
Contextual Info: APT50M50L2LL 500V 87A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays

smd diode 708

Abstract: 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220
Contextual Info: Previous Datasheet Index Next Data Sheet 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate