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    Text: FTD2013 N- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features •Low ON-state resistance. •2.5V drive. unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation


    Original     		PDF FTD2013 1000mm 980828TM2fXHD