H5GQ4H24MFR-R2C
Abstract: H5GQ2H24AFR-R0C H5GC4H24MFR-T2C H5GQ1H24BFR-R0C H5GQ1H24BFR-T2C H5GC2H24BFR-T2C H5TQ2G63DFR-11c H5GQ2H24AFR-T2C H5TC4G63AFR-11C H5TQ2G63FFR
Text: Page 1 DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.1GHz 0.9ns H5TQ4G63AFR-N1C FBGA(96ball) 8Bank, 1.5V/ 1.5V Now 1.0GHz (1.0ns) H5TC4G63AFR-N0C FBGA(96ball) 8Bank, 1.35V/ 1.35V Now FBGA(96ball) 8Bank, 1.5V/ 1.5V Now FBGA(96ball) 8Bank, 1.35V/ 1.35V
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H5TQ4G63AFR-N1C
96ball)
H5TC4G63AFR-N0C
256Mx16
H5TC4G63AFR-11C
900MHz
H5GQ4H24MFR-R2C
H5GQ2H24AFR-R0C
H5GC4H24MFR-T2C
H5GQ1H24BFR-R0C
H5GQ1H24BFR-T2C
H5GC2H24BFR-T2C
H5TQ2G63DFR-11c
H5GQ2H24AFR-T2C
H5TC4G63AFR-11C
H5TQ2G63FFR
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Untitled
Abstract: No abstract text available
Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:
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M2S1G64CBH4B5P
M2S2G64CB88B5N
M2S4G64CB8HB5N
PC3-8500
PC3-10600
PC3-12800
DDR3-1066/1333/1600
128Mx16
256Mx8
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msi 7267 MOTHERBOARD SERVICE MANUAL
Abstract: ttl cookbook msi ms 7267 MOTHERBOARD CIRCUIT diagram "0.4mm" bga "ball collapse" height PCF 799 crystal oscillator 8MHz 4 pins smd diode MARKING F5 44C smd TRANSISTOR code marking A7 terminals diagram of smd transistor bo2 cookbook for ic 555
Text: GTL/GTLP Logic High-Performance Backplane Drivers Data Book Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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GDFP1-F48
-146AA
GDFP1-F56
-146AB
msi 7267 MOTHERBOARD SERVICE MANUAL
ttl cookbook
msi ms 7267 MOTHERBOARD CIRCUIT diagram
"0.4mm" bga "ball collapse" height
PCF 799
crystal oscillator 8MHz 4 pins
smd diode MARKING F5 44C
smd TRANSISTOR code marking A7
terminals diagram of smd transistor bo2
cookbook for ic 555
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PS8743
Abstract: SSTU32864A PI74SSTU32864A Q11A Q13A
Text: PI74SSTU32864A 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer Features Description • PI74SSTU32864A is designed for low-voltage operation, VDD = 1.8V • Supports Low Power Standby Operation • Enhanced Signal Integrity for 1 and 2 Rank Modules
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PI74SSTU32864A
25-Bit
14-Bit
PI74SSTU32864A
10MHz,
PS8743
PS8743
SSTU32864A
Q11A
Q13A
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B2G1646Q
96FBGA
k4b2g1646q
ddr3 2133
K4B2G1646Q-BCK0
K4B2G1646Q-BCMA
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IS46TR
Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16128A/AL,
IS43/46TR82560A/AL
256Mx8,
128Mx16
cycles/64
cycles/32
60A/AL
78-ball
IS46TR
IS43TR82560A
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
"2Gb DDR3 SDRAM"
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Q1412
Abstract: ICS97ULP877 ICSSSTUBF32866A Q11A Q13A
Text: ICSSSTUBF32866A Advance Information Integrated Circuit Systems, Inc. 25-Bit Configurable Registered Buffer for DDR2 Pin Configuration Recommended Application: • DDR2 Memory Modules • Provides complete DDR DIMM solution with ICS97ULP877 • Ideal for DDR2 667, and 800
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ICSSSTUBF32866A
25-Bit
ICS97ULP877
14-bit
ICSSSTUA32864
10-0055C
ICSSSTUBF32866Az
MO-205
Q1412
ICS97ULP877
ICSSSTUBF32866A
Q11A
Q13A
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ULP877
Abstract: IDTCSPUA877A MO-205 SSTU32864 ICS97ULP877 ICS98ULPA877A ICSSSTUB32871A D0-D20
Text: ICSSSTUB32871A Integrated Circuit Systems, Inc. 27-Bit Registered Buffer for DDR2 Recommended Application: • DDR2 Memory Modules • Provides complete DDR DIMM solution with ICS98ULPA877A, ICS97ULP877, or IDTCSPUA877A • Optimized for DDR2 400/533/667 JEDEC 4 Rank
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ICSSSTUB32871A
27-Bit
ICS98ULPA877A,
ICS97ULP877,
IDTCSPUA877A
SSTU32864
ULP877
ULPA877A,
IDTCSPUA877A
MO-205
SSTU32864
ICS97ULP877
ICS98ULPA877A
ICSSSTUB32871A
D0-D20
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71WS256NC0BAIAU
Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
71WS256NC0BAIAU
cosmoram synchronous
S71WS256NC0
S71WS256ND0
S71WS512ND0
TSD084
S71WS512NC0BFIAZ
SA002
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VSP6244
Abstract: hp laptop ac adapter schematics diagram 3 phase dc converter afe circuit diagram igbt omap3530 GPMC NORFLASH klixon 8-S msp430F5438 usart examples ir remote control transmitter ABC T2 vsp6822 STB 2300 HD Streaming IP Set Top Box UCC28070
Text: 2 Introduction and Table of Contents TI’s Solutions Cover the Entire Video Chain TI has been involved in the video market for more than 25 years. The steps in the video chain span everything from the creation of the original content to the final viewing
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NT5CB64M16AP-CF
Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature Write Leveling 1.5V ± 0.075V JEDEC Standard Power Supply OCD Calibration 8 Internal memory banks (BA0- BA2) Dynamic ODT (Rtt_Nom & Rtt_WR) Differential clock input (CK, )
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NT5CB256M4AN
NT5CB128M8AN
NT5CB64M16AP
60-Ball
84-Ball
NT5CB64M16AP-CF
nt5cb64m16
NT5CB64M16AP-CG
NT5CB64M16AP
nanya NT5CB64M16AP
NT5CB64m
NT5CB64M16AP-BE
nt5cb64m16ap-dh
MPR 20 20 CF RESISTOR
NT5CB64M16AP-AC
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Untitled
Abstract: No abstract text available
Text: Preliminary Revised November 2004 74VCX32245 Low Voltage 32-Bit Bidirectional Transceiver with 3.6V Tolerant Inputs and Outputs Preliminary General Description The VCX32245 contains thirty-two non-inverting bidirectional buffers with 3-STATE outputs and is intended for bus
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74VCX32245
32-Bit
VCX32245
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96-ball FBGA
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)
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EDJ1108EJBG
EDJ1116EJBG
EDJ1108EJBG)
EDJ1116EJBG)
78-ball
96-ball
1866Mbps/1600Mbps/1333Mbps
96-ball FBGA
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BF96A
Abstract: CY2SSTU32866 Q11A Q13A Q8A-Q14A
Text: CY2SSTU32866 1.8V, 25-bit 1:1 or 14-bit (1:2) JEDEC-Compliant Data Register with Parity Features CSR# inputs are HIGH. If either DCS# or CSR# input is LOW, the Qn outputs will function normally. The RESET# input has priority over the DCS# and CSR# control and will force the
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CY2SSTU32866
25-bit
14-bit
96-ball
BF96A
CY2SSTU32866
Q11A
Q13A
Q8A-Q14A
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CD4000 SERIES BOOK
Abstract: 74 LS 00 Logic Gates CD4000 cross REFERENCE 1G04 7404 TTL cd4000 cmos logic series guide 164245 7404 not gate SCYT129 s 5941
Text: TM Technology for Innovators L OGIC M IGRATION G UIDE ➤Widebus and Widebus+™: CMOS & BiCMOS Families ➤Little Logic: CMOS Families ➤Gates and Octals: Bipolar and CMOS Families logic.ti.com INTRODUCTION As the world leader in logic, Texas Instruments TI offers a full spectrum of
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A070804
SCYB032
CD4000 SERIES BOOK
74 LS 00 Logic Gates
CD4000 cross REFERENCE
1G04
7404 TTL
cd4000 cmos logic series guide
164245
7404 not gate
SCYT129
s 5941
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78 ball fbga
Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16128A/AL,
IS43/46TR82560A/AL
256Mx8,
128Mx16
cycles/64
cycles/32
Ref82560A/AL
78-ball
78 ball fbga
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
256Mx8
96-ball FBGA
96-BALL
96-ball FBGA ddr3
DDR3-1866L
78ball FBGA
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Untitled
Abstract: No abstract text available
Text: 2Gb: x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features DDR3L-RS SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM
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MT41K256M8
MT41K128M16
8192-cycle
09005aef847d068f
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NT5CB256
Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800
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NT5CB512M8CN
NT5CB256M16CP
NT5CC512M8CN
NT5CC256M16CP
DDR3/L-1600-CL11
DDR3-1866-CL13
DDR3-2133-CL14
NT5CB256
NT5CC256M16CP-DI
NT5CB256M16
NT5CB256m
NT5CB512M8CN-DI
NT5CB256M16CP-DI
NT5CC512M8CN-DI
NT5CC512M8CN-DII
NT5CB256M16CP-EK
NT5CC512M8
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MT41K512M8RH
Abstract: 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L
Text: 4Gb: x4, x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K1G4 - 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • Self refresh temperature SRT • Automatic self refresh (ASR)
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MT41K1G4
MT41K512M8
MT41K256M16
09005aef8488935b
MT41K512M8RH
901KB
MT41K256M16
MT41K512M8RH-125
256M16
A2 SMD CODE MARKING
MT41K512M8RH-125M
DDR3L
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96-ball FBGA
Abstract: No abstract text available
Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • • • • • • Self refresh temperature SRT Automatic self refresh (ASR) Write leveling Multipurpose register
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MT41K256M8
MT41K128M16
09005aef847d068f
96-ball FBGA
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MT41K128M16
Abstract: No abstract text available
Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
09005aef83ed2952
MT41K128M16
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MT41K128M16
Abstract: MT41K128M1 TIS87 AC135 MT41K256 MT41K128M 140-RT-T MT41K
Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C; See SRT
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MT41K256M8
MT41K128M16
8192-cycle
09005aef847d068f
MT41K128M16
MT41K128M1
TIS87
AC135
MT41K256
MT41K128M
140-RT-T
MT41K
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A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
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