9610Q1EAA1 Search Results

ED 115G

Abstract: P channel 1200v 25a IGBT MIG25Q804H
Contextual Info: TOSHIBA TENTATIVE MIG25Q804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG25Q804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage

Contextual Info: 0001492 115296348 I S/ 4 89 / 00- 06 - 29- 14 :05/ P. 0 0 2 2SK3309 [TENTATIVE T O S H I B A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE /r-MOSV 2SK33O9 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA TEN TATIVE GT10Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 HIGH P O W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS 1 5 .9 M A X f t3 - 2 i 0 .2 The 3rd Generation Enhancement-Mode H ig h Speed

igbt toshiba mg

Abstract: 100Q2YS50A 100Q2 100Q2YS50
Contextual Info: TOSHIBA MG 100Q2YS50A MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0.3^s Max. @Inductive Load Low Saturation Voltage

Contextual Info: TOSHIBA TENTATIVE MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tj’=0.3/^s Max. @ Inductive Load Low Saturation Voltage : v CE(sat) = 3-o v (Max.)

M1G150Q6CMB1X

Contextual Info: TO SH IBA TENTATIVE M IG150Q6CM B1X TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG 15 0 Q 6 C MB 1X 1200v/150A 6ini HIGH POWER SWITCHING APPLICATION > ~Ç /\ ~\ \'\f E. I MOTOR CONTROL APPLICATION • Integrates Inverter Power Circuits & Control Circuits (IGBT drive units, Protection units for ShortCurrent, Over-Current, Under-Voltage & Over Temperature) in One Package.