9574 Search Results

Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

HFA25TB60PbF

Abstract: B120 HFA06TB120 HFA25TB60 IRFP250
Contextual Info: PD-95741 HFA25TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 IF AV = 25A Qrr (typ.)= 112nC 2

Contextual Info: PD - 95745 DIGITAL AUDIO MOSFET IRLIB9343PbF Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI

Contextual Info: QSD Sistemi SRL Andrea Cattania Corso Europa 16/c 20060 Pessano con Bornago Milan Italy +39 2 95741699 Fax: +39 2 9504773 Company Background QSD Sistemi SRL was founded in 1984, when a team of young electronic designers which rich technical expertise and enthusiasm of their job decided to redirect their

IE transformer

Contextual Info: PD- 95746 IRF710SPbF • Lead-Free www.irf.com 1 8/23/04 IRF710SPbF 2 www.irf.com IRF710SPbF www.irf.com 3 IRF710SPbF 4 www.irf.com IRF710SPbF www.irf.com 5 IRF710SPbF 6 www.irf.com IRF710SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline

Contextual Info: PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline

Contextual Info: PD- 95746 IRF710SPbF • Lead-Free Document Number: 91042 8/23/04 www.vishay.com 1 IRF710SPbF Document Number: 91042 www.vishay.com 2 IRF710SPbF Document Number: 91042 www.vishay.com 3 IRF710SPbF Document Number: 91042 www.vishay.com 4 IRF710SPbF Document Number: 91042

1517A

Contextual Info: PD - 95745 DIGITAL AUDIO MOSFET IRLIB9343PbF Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI

IR 1838 T

Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

Contextual Info: HY-9574 h a r r is ADVANCED s u> o> Sampling 12 Bit A/D Converter with >8/16 Bit //P Interface X Features Applications • Com plete 12 Bit Sampling Reference and Clock A /D Converter with • Precision Industrial D ata Acquisition Systems • Electronic Test and Scientific Instrumentation

diode 3432

Abstract: I840
Contextual Info: PD- 95744 IRFI9620GPbF • Lead-Free www.irf.com 1 8/23/04 IRFI9620GPbF 2 www.irf.com IRFI9620GPbF www.irf.com 3 IRFI9620GPbF 4 www.irf.com IRFI9620GPbF www.irf.com 5 IRFI9620GPbF 6 www.irf.com IRFI9620GPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

ED marking code diode

Contextual Info: PD- 95748 IRF620SPbF • Lead-Free www.irf.com 1 8/23/04 IRF620SPbF 2 www.irf.com IRF620SPbF www.irf.com 3 IRF620SPbF 4 www.irf.com IRF620SPbF www.irf.com 5 IRF620SPbF 6 www.irf.com IRF620SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: 997299DC9 9 C!9BC""9 2345678594ABC1 D2ED1F911429193239 1 9 9 C1 A #14!! 1 19 19 19 19 19 19 19 19 19 19 19 19 19 9 #73F$96FF9%&3$F%95749'77&4(97(437F9 .7(77$9 3$9F%9719&3%9%43/49

EF 9364

Abstract: 3E29 9n15
Contextual Info: 1 1 997299FA 9 234567859ABCD1 1 1 DEFF1B3917B41C3291BFE4111 93239 9 9 D 1 B& $14 !1 19 ! +7&7E7"(9 199997&437E979)FF9*9 19 +

IR 1838

Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

91166

Contextual Info: PD- 95744 IRFI9620GPbF • Lead-Free 8/23/04 Document Number: 91166 www.vishay.com 1 IRFI9620GPbF Document Number: 91166 www.vishay.com 2 IRFI9620GPbF Document Number: 91166 www.vishay.com 3 IRFI9620GPbF Document Number: 91166 www.vishay.com 4 IRFI9620GPbF

B120

Abstract: HFA06TB120 HFA25TB60 IRFP250
Contextual Info: PD-95741 HFA25TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 IF AV = 25A Qrr (typ.)= 112nC 2

Contextual Info: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD- 95747 IRF610SPbF • Lead-Free www.irf.com 1 8/23/04 IRF610SPbF 2 www.irf.com IRF610SPbF www.irf.com 3 IRF610SPbF 4 www.irf.com IRF610SPbF www.irf.com 5 IRF610SPbF 6 www.irf.com IRF610SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: PD - 95745 DIGITAL AUDIO MOSFET IRLIB9343PbF Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI

Contextual Info: PD-95741 HFA25TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 IF AV = 25A Qrr (typ.)= 112nC 2