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    9512N Search Results

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    9512N Price and Stock

    IXYS Corporation MDD95-12N1B

    DIODE MOD GP 1200V 120A TO240AA
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    DigiKey MDD95-12N1B Bulk 36 1
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    Mouser Electronics MDD95-12N1B 607
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    Newark MDD95-12N1B Bulk 1
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    TTI MDD95-12N1B Box 108 36
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    TME MDD95-12N1B 23 1
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    Chip 1 Exchange MDD95-12N1B 2,535
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    New Advantage Corporation MDD95-12N1B 1,440 1
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    Altech Corporation 8951.2N

    SAFETY RELAY 1CH DPDT 24VDC CONT
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    DigiKey 8951.2N Bulk 1
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    Mouser Electronics 8951.2N
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    Newark 8951.2N Bulk 1
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    RS 8951.2N Bulk 6 Weeks 1
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    TestEquity LLC 8951.2N
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    iNRCORE LLC PL9512NLT

    FIXED IND 27UH 850MA 146MOHM SMD
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    DigiKey PL9512NLT Reel 2,200
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    Avnet Americas PL9512NLT Reel 8 Weeks 2,200
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    TE Connectivity EB9512N001

    TXR54AZ00-0804AI-CS9172
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    DigiKey EB9512N001 Bulk 50
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    Avnet Americas EB9512N001 Bulk 0 Weeks, 6 Days 50
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    Interstate Connecting Components EB9512N001
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    Master Electronics EB9512N001
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    Sager EB9512N001 1
    • 1 $169.47
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    JRH Electronics GS38999-5-12NF05

    BACKSHELL
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    DigiKey GS38999-5-12NF05 Bulk 1
    • 1 $988.04
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    9512N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M5 DIODE 22-35 L

    Abstract: 95-18N1 DIODE 22-35 L DIODE RECTIFIER BRIDGE SINGLE 22-35 95-16N1 9512 ixys mdd
    Text: Diode Modules MDD 95 IFRMS = 2 x 180 A IFAVM = 2 x 120 A VRRM = 800 - 1800 V VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Maximum Ratings 180 A 120 A 50/60 Hz, RMS


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    PDF 95-08N1 95-12N1 95-14N1 95-16N1 95-18N1 M5 DIODE 22-35 L DIODE 22-35 L DIODE RECTIFIER BRIDGE SINGLE 22-35 9512 ixys mdd

    9508N

    Abstract: ixys mdd MS170 95-18N1 2x180A 9518n
    Text: MDD 95 IFRMS = 2x 180 A IFAVM = 2x 120 A VRRM = 800-2200 V Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 Type Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 105°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM


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    PDF 95-08N1 95-12N1 95-14N1 95-16N1 95-18N1 95-20N1 95-22N1 O-240 9508N ixys mdd MS170 2x180A 9518n

    ixys MDD 26 - 14

    Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l


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    PDF

    M5 DIODE 22-35 L

    Abstract: No abstract text available
    Text: MDD 95 IFRMS = 2x 180 A IFAVM = 2x 120 A VRRM = 800-2200 V Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 Type Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 105°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM


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    PDF 95-08N1 95-12N1 95-14N1 95-16N1 95-18N1 95-20N1 95-22N1 O-240 M5 DIODE 22-35 L

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    MDD 500-22N1

    Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●


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    PDF D6-11 D6-14 D6-17 D6-20 D6-23 D6-26 D6-29 D6-32 D6-35 D6-38 MDD 500-22N1 ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1

    Untitled

    Abstract: No abstract text available
    Text: VBO 95 IdAV = 92 A VRRM = 800-1600 V Single Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS16 Types ~L 9 ~ K10 VBO 95-08NO7 VBO 95-12NO7 VBO 95-14NO7 VBO 95-16NO7 Symbol Test Conditions IdAV ① TC = 100°C, module


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    PDF 95-08NO7 95-12NO7 95-14NO7 95-16NO7

    Untitled

    Abstract: No abstract text available
    Text: M O SEL V tTE LiC V53C8512N 3.3 VOLT, LO W POWER 512K x 8 AN D 5 1 2 K x 9 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIM INARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L M ax. R A S A cce ss T im e, Orac 6 0 ns 70 ns M ax. C o lum n A d dre ss A cce ss T im e , tCAA)


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    PDF V53C8512N 60/60L 70/70L V53C8S12NL V53C8512N January199S b3S33

    MDD 500-22N1

    Abstract: MDO 500-12N1 500-22N1 255-16N1 26-14N1B 500-20N1 MDD 172-14N1
    Text: Diode Modules, J - L 1 » 1-N— 11 I L w 1 Single and Dual -J MDO lFAV= 36-560 A v Type I FAV @ T'C V A X 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800_


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    PDF 26-08N1B 26-12N1B 26-14N1B 26-16N1B 26-18N1B 44-06N1B 44-12N1B 44-14N1B 44-16N1B 44-18N1B MDD 500-22N1 MDO 500-12N1 500-22N1 255-16N1 500-20N1 MDD 172-14N1

    B2HKF

    Abstract: VUM24-05N 95-16N07 VHF3612IO5 vhf28-14io5 12io1 vhf28-08 vhf15-16io5 VHFD29-08IO1 VHF36-12IO5
    Text: 1~ Rectifier Bridges 1~ Rectifier Brida es with Standard Diodes, B2U Type ► New ► VB0 95-08N07 VBO 95-12N07 VBO 95-14N07 ► VBO 95-16N07 VBO 95-18N07 ► V B 0 105- 08N07 ► V B 0 105- 12N07 V B 0 105- 14N07 VB0105- 16N07 VB0105- 18N07 VBO125 08N07 >- V B 0 125 12NC7


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    PDF 95-08N07 95-12N07 95-14N07 95-16N07 95-18N07 08N07 12N07 14N07 VB0105- 16N07 B2HKF VUM24-05N VHF3612IO5 vhf28-14io5 12io1 vhf28-08 vhf15-16io5 VHFD29-08IO1 VHF36-12IO5

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC V53C8512N/9512N 3.3 VOLT, LOW POWER 512K x 8 AND 512K x 9 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY HIGH PERFORMANCE V53C8512N/9512N 60/60L 70/70L Max. RAS Access Time, tRAC 60 ns 70 ns Max. Column Address Access Time, (I^ aa)


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    PDF V53C8512N/V53C9512N V53C8512N/V53C9512N 60/60L 70/70L V53C8512NL/V53C9512NL V53C8512N/9512N V53C8512N/95of V53C8512N V53C9512N V53C8512NL

    Untitled

    Abstract: No abstract text available
    Text: bHE » MOSEL- VITELIC • DDGHD'ìG 3 3 e] « M O V I V53C8512N/9512N 3.3 VOLT, LOW POWER 512K x 8 AND 5 1 2 K x 9 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L Max. RAS Access Time, tRAc 60 ns 70 ns Max. Column Address Access Time, (tCAA)


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    PDF V53C8512N/V53C9512N 60/60L 70/70L V53C8512N L/V53C 9512N V53C9512N V53C8512NL/9512NL

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Diode Modules V ’ RSM V RRM 900 1300 1500 1700 1900 ^FRMS ^FAVM MDD MDD MDD MDD MDD "^"vj — ^~VJM VR= 0 Ji2dt L- H 95-08N1 B 95-12N1 B 95-14N1B 95-16N1B 95-18N1B * TVJ = 45° C VR= 0 TVj — VR= 0 t t t t = = = = 10 ms 8.3 ms 10 ms 8.3 ms 50 (60


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    PDF 95-08N1 95-12N1 95-14N1B 95-16N1B 95-18N1B

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


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    PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    mdd 42

    Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B
    Text: Diode Modules, Single and Double f ‘ 1 FAV = 36-500 A MDO Type FSM New 45°C 10 ms A MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD 26-16N1B MDD26-18N1B 100 60 800 1200 1400 1600 1800 36 800 59 100 100 1150 100 150 1400 p 650 m iî °C 6.0 150 K/W 1.0 0.2 24 Fig. 24 TO-240 AA


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    PDF O-240 MDD26-08N1B MDD26-12N1B MDD26-14N1B 26-16N1B MDD26-18N1B MDD44-08N1B 44-12N1B 44-14N1B MDD44-16N1B mdd 42 diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


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    PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50

    MAX-7Q 0

    Abstract: No abstract text available
    Text: M O S E L V IT E U C V53C8512N 3.3 VOLT, LOW POWER 5 1 2 K x 8 AND 5 1 2 K x 9 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L Max. RAS Access Time, Iraq 60 ns 70 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns


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    PDF V53C8512N V53C8512N 60/60L 70/70L V53C8512NL MAX-7Q 0