947 TRANSISTOR Search Results

teltone m-947

Abstract: 8048 printer
Contextual Info: INNOVATING SOLUTIONS M-947 DTMF Receiver The T eltone M -947 com bines switched-capacitor and dig­ ital techniques to decode Dual-Tone M ultifrequency DTM F signals to four-bit binary data. N o prefiltering o f the DTM F signal is required. The M -947 is contained in a 22-pin DIP,

bo 947

Abstract: BDP947C dp947
Contextual Info: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B

bo 947

Contextual Info: tC e i x d n e SUSTAINED PRODUCTS _ lin iU M H f M -947 DTMF Receiver The Teltone M-947 combines switched-capacitor and dig­ ital techniques to decode Dual-Tone Multifrequency DTMF signals to four-bit binary data. No prefiltering o f the DTMF signal is required. The M-947 is contained in a 22-pin DIP,

teltone m-947

Abstract: M947 bo 947 M-947 947 transistor TELTONE bd 743 transistor 947s dial tone crystal oscillator 4049
Contextual Info: SUSTAINED PRODUCTS ïE e lx d n e 1 JfflMHB M -947 DTMF Receiver • • • • • The Teltone M-947 combines switched-capacitor and dig­ ital techniques to decode Dual-Tone Multifrequency DTMF signals to four-bit binary data. No prefiltering o f the DTMF

m8730

Abstract: DOLD BF9250.91 M7144 M7145 recticur M7907 9250BF M7696 m7850 BF9250
Contextual Info: Leistungselektronik Halbleiterschütz BF 9250, BH 9250 powerswitch 0217109 • • • • • • • • • • • BF 9250 bis 10 A BF 9250 bis 50 A • • • nach IEC/EN 60 947-4-2, IEC/EN 60 947-4-3 1-, 2- und 3-polige Ausführungen Steuerspannung AC 230 V an A1/A2

Contextual Info: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.

Q62702-D1337

Abstract: BDP948 BDP950 Q62702-D1335 947 SOT-223
Contextual Info: BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Type Marking Ordering Code Pin Configuration

m lc 945

Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

bdp 11

Abstract: marking bdp
Contextual Info: BDP947, BDP949 Silicon NPN Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP948, BDP950 PNP 2 1 Type Marking Pin Configuration BDP947 BDP 947

Contextual Info: BDP947, BDP949 Silicon NPN Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP948, BDP950 PNP 2 1 Type Marking Pin Configuration BDP947 BDP 947

BD946

Abstract: BD944 BD948 lc 945 p transistor BD943 IEC134
Contextual Info: BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE DATA BD944 946 948

947 transistor

Abstract: transistor a 949 VPS05163 TRANSISTOR bdp 948
Contextual Info: BDP 947, BDP 949 Silicon NPN Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP 948, BDP 950 PNP 2 1 Pin Configuration VPS05163 Type Marking

BDP947

Abstract: BDP948 BDP949 BDP950 VPS05163 947 transistor
Contextual Info: BDP947, BDP949 Silicon NPN Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP948, BDP950 PNP 2 1 Type Marking Pin Configuration BDP947 BDP 947

BDS945

Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
Contextual Info: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors

VPS05163

Contextual Info: BDP 948, BDP 950 PNP Silicon AF Power Transistors
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP 947, BDP 949 NPN 2 1 Pin Configuration VPS05163 Type

Contextual Info: BDP 948, BDP 950 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 947, BDP 949 NPN 2 1 Pin Configuration VPS05163

Contextual Info: SIEMENS BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP 2=C II 1 =B LU II CO O BDP 949 Q62702-D1337

300 watts amplifier s-band

Abstract: "Power over Ethernet"
Contextual Info: SMBJSAC5.0 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR Description SMBJ surface mount package is utilized where power and space is a requirement. Designed for effective

b0948

Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
Contextual Info: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A

Contextual Info: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

BD946

Abstract: BD948 IN 3319 B
Contextual Info: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.

Contextual Info: SMAJ4728A THRU SMAJ4764A 8700 E. Thomas Road Scottsdale, AZ 85252 Phone: 480 941-6300 Fax: (480) 947-1503 Features • • • • • • SILICON 2 WATT ZENER DIODES For surface mount applications (flat handling surface for accurate placement) 3.3 thru 100 Volt Voltage Range

1.8 degree unipolar stepper motor 332-082

Abstract: stepper motor driver board 332-098 RS 344-631 12v stepper motor 344631 12V unipolar STEPPER MOTOR 7.5 7.5 stepper motor STEPPER MOTOR 344-631 1.8 degree BIPOLAR 4 PIN stepper motor 12v 7.5 stepper motor 332-947 saa1027 application note
Contextual Info: Issued November 1987 B8199 Stepper motors 7.5¡ stepper motors size 1 332-947 and size 2 (332-953) Two 7.5¡ stepper motors each with four 12V dc windings (coils) and permanent magnet rotor construction. Designed for unipolar drive, these motors are easily interfaced to simple and relatively low power

b0948

Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
Contextual Info: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.